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MOSFETs from Manufacturers in Japan - Page 127

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 127 of 161
TK72E08N1 Image
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Toshiba - TK72E08N1

MOSFET from Toshiba
80 V, 81 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
157 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
3.6 to 4.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
192 W
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Voltage Regulators
more info
RQ6E040XN Image
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ROHM Semiconductor - RQ6E040XN

MOSFET from ROHM Semiconductor
30 V, 3.3 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
35 to 70 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
DC/DC converters
more info
TPC8133 Image
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Toshiba - TPC8133

MOSFET from Toshiba
-40 V, 64 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-9 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
11 to 18 milliohm
Gate Source Voltage:
-25 to 20 V
Power Dissipation:
1.9 W
Package:
SOP-8
Industry:
Industrial, Military, Automotive
Applications:
Lithium-Ion Secondary Batteries, Power Management ...
more info
RSM002N06 Image
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ROHM Semiconductor - RSM002N06

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.25 to 0.25 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1.7 to 12 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT723
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPH2010FNH Image
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Toshiba - TPH2010FNH

MOSFET from Toshiba
250 V, 7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
168 to 198 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
42 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RUM002N05 Image
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ROHM Semiconductor - RUM002N05

MOSFET from ROHM Semiconductor
50 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 to 0.2 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1600 to 7200 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT723
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK70J20D Image
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Toshiba - TK70J20D

MOSFET from Toshiba
200 V, 160 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
20 to 27 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
410 W
Package:
TO-3P
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Voltage Regulators
more info
RHP030N03 Image
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ROHM Semiconductor - RHP030N03

MOSFET from ROHM Semiconductor
30 V, 6.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
90 to 210 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT89
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPH1110ENH Image
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Toshiba - TPH1110ENH

MOSFET from Toshiba
200 V, 7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
96 to 114 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
42 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RW4E045AJ Image
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ROHM Semiconductor - RW4E045AJ

MOSFET from ROHM Semiconductor
30 V, 4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
28 to 58 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.5 W
Temperature operating range:
0 to 150 Degree C
Package:
DFN16167T
Industry:
Industrial, Commercial
Applications:
Switching, DC/DC converter, Battery switch
more info
TPH11006NL Image
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Toshiba - TPH11006NL

MOSFET from Toshiba
60 V, 23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
9.6 to 17 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
34 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
Switching Voltage Regulators, DC-DC Converters, Mo...
more info
RU1C002UN Image
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ROHM Semiconductor - RU1C002UN

MOSFET from ROHM Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 to 0.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
800 to 4800 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT323FL
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK5R3A06PL Image
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Toshiba - TK5R3A06PL

MOSFET from Toshiba
60 V, 36 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
62 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4.1 to 9.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
36 W
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RXH070N03 Image
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ROHM Semiconductor - RXH070N03

MOSFET from ROHM Semiconductor
30 V, 5.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
20 to 39 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
0 to 150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK7R2E10PL Image
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Toshiba - TK7R2E10PL

MOSFET from Toshiba
100 V, 44 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
94 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
6.1 to 11 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
123 W
Package:
TO-220
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
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