MOSFETs from Manufacturers in Japan - Page 13

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 13 of 161
Silicon Carbide N-Channel MOSFET, Silicon Carbide SBD Module

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
800 A
Drain Source Breakdown Voltage:
3300 V
Drain Source Resistance:
2.75 ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
4680 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
High-Power Switching, Motor Controllers (including...
more info
-60 V, 2.9 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
485 to 868 milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
5 W
Temperature operating range:
-55 to 150 Degree C
Package:
UPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
750 V, 56 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 to 80 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
20 to 34.2 milli-ohm
Gate Source Voltage:
-4 to 21 V
Power Dissipation:
277 W
Temperature operating range:
-40 to 175 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, SMPS(Switch mod...
more info
20 V, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
80 to 300 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.54 W
Temperature operating range:
150 Degree C
Package:
WSSMini6-F1
Industry:
Industrial, Commercial
more info
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
75 to 250 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Notebook PCs, Cellular and portable phones, On-boa...
more info
30 V, 0.68 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.68 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.35 to 0.7 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
Inductive loads switching
more info
N-Channel Silicon Carbide MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
15 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
431 W
Temperature operating range:
-55 to 175 Degree C
Applications:
Switching Voltage Regulators
more info
-60 V, , P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
22 to 45 milliohm
Gate Source Voltage:
-16 to 2.5 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
LDPAK(S)-(1)
Industry:
Automotive
Applications:
Power Switching
more info
1200 V SiC Power Module

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
75 to 106 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
11 to 22 milli-ohm
Gate Source Voltage:
-4 to 21 V
Power Dissipation:
361 W
Temperature operating range:
-40 to 175 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Inverter, Converter
more info
60 V, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
31 to 65 Milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
1.7 W
Temperature operating range:
-55 to 150 Degree C
Industry:
Automotive
Applications:
Automotive Switching Circuit
more info
-20 V P-Channel Power MOSFET for High-Speed Switching Applications

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.7 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
230 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Notebook PCs, Cellular and portable phones, On-boa...
more info
60 V, 0.5 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1.1 to 1.4 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
High Speed Switching
more info
Silicon N-channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
2.3 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
180 W
Temperature operating range:
-55 to 175 Degree C
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
-30 V, 4.2 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
138 to 303 milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
30 V N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
±20 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.5 to 4 milli-ohm
Gate Source Voltage:
-2 to 10 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
WLCSP2020
Industry:
Industrial, Commercial
Applications:
USB VBUS Protection, Battery Protection, Load Swit...
more info

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