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MOSFETs from Manufacturers in Japan - Page 8

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 8 of 161
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Renesas - UPA1930TE

MOSFET from Renesas
-30 V, 7.5 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
58 to 100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
TMM
Industry:
Commercial, Industrial
more info
BST47B1P4K01-VC Image
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ROHM Semiconductor - BST47B1P4K01-VC

MOSFET from ROHM Semiconductor
750 V, 33 to 47 A, 227 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
33 to 47 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
26 to 60 milli-ohm
Gate Source Voltage:
-4 to 21 V
Power Dissipation:
227 W
Temperature operating range:
-40 to 175 Degree C
Package:
HSDIP20
Industry:
Automotive, Industrial, Commercial
Applications:
Inverter, Converter, (Hybrid) electrical vehicles ...
more info
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Panasonic Corporation - FG6543010R

MOSFET from Panasonic Corporation
-30 to 30 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.1 to 0.1 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
2000 to 17000 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-363
Industry:
Industrial, Commercial
more info
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Torex Semiconductor - XP223P1501TR-G

MOSFET from Torex Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
100 to 430 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23(TO-236)
Industry:
Commercial, Industrial
Applications:
Switching
more info
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Sanken Electric - 2SK2848

MOSFET from Sanken Electric
600 V, -2 to 2 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
3 to 3.8 Ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220F-3L
Industry:
Industrial, Commercial
more info
TW054V65C Image
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Toshiba - TW054V65C

MOSFET from Toshiba
650 V N-Channel Enhancement MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 to 36 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
54 to 81 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
132 W
Package:
DFN
Industry:
Industrial, Commercial
Applications:
Switching Voltage Regulators
more info
RQJ0201UGDQA Image
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Renesas - RQJ0201UGDQA

MOSFET from Renesas
-20 V, 6.3 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
53 to 112 milliohm
Gate Source Voltage:
-12 to 8 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
BST70B2P4K01-VC Image
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ROHM Semiconductor - BST70B2P4K01-VC

MOSFET from ROHM Semiconductor
1200 V, 49 to 70 A, 385 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
49 to 70 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
18 to 44 milli-ohm
Gate Source Voltage:
-4 to 21 V
Power Dissipation:
385 W
Temperature operating range:
-40 to 175 Degree C
Package:
HSDIP20
Industry:
Automotive, Industrial, Commercial
Applications:
Inverter, Converter, (Hybrid) electrical vehicles ...
more info
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Panasonic Corporation - FJ3303010L

MOSFET from Panasonic Corporation
-30 V, P-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Depletion Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
4000 to 17000 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.1 W
Temperature operating range:
150 Degree C
Package:
SOT-723
Industry:
Industrial, Commercial
more info
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Torex Semiconductor - XP231P02015R-G

MOSFET from Torex Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
3200 to 8000 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-523
Industry:
Commercial, Industrial
Applications:
Switching
more info
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Sanken Electric - DKG1020

MOSFET from Sanken Electric
100 V, -20 to 20 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-20 to 20 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
41 to 59 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO252-2L
Industry:
Industrial, Commercial
Applications:
DC / DC converter, Switching
more info
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Isahaya Electronics - INK0310CC1

MOSFET from Isahaya Electronics
60 V, 2.7 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.7 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
92 to 132 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.9 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
Switching
more info
TW092V65C Image
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Toshiba - TW092V65C

MOSFET from Toshiba
650 V N-Channel SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 27 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
92 to 136 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
111 W
Package:
DFN
Industry:
Industrial, Commercial
Applications:
Switching Voltage Regulators
more info
RJE0607JSP Image
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Renesas - RJE0607JSP

MOSFET from Renesas
-60 V, , P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
140 to 380 milliohm
Gate Source Voltage:
-16 to 2.5 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Automotive
Applications:
Power Switching
more info
BST70M2P4K01-VC Image
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ROHM Semiconductor - BST70M2P4K01-VC

MOSFET from ROHM Semiconductor
1200 V, 27 to 70 A, 227 to 385 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
27 to 70 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
18 to 94 milli-ohm
Gate Source Voltage:
-4 to 21 V
Power Dissipation:
227 to 385 W
Temperature operating range:
-40 to 175 Degree C
Package:
HSDIP20
Industry:
Automotive, Industrial, Commercial
Applications:
Converter, (Hybrid) electrical vehicles EV/HEV
more info
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