1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs from Manufacturers in Japan - Page 92

2,414 MOSFETs from 10 manufacturers meet your specification.
Filters (1)
Selected Filters:
2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 92 of 161
US6J12 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - US6J12

MOSFET from ROHM Semiconductor
-12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
75 to 400 milliohm
Gate Source Voltage:
-8 to 0 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-363T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK19A50W Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK19A50W

MOSFET from Toshiba
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18.5 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
160 to 190 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
R6024VNX3 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - R6024VNX3

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-24 to 24 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
127 to 166 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
245 W
Temperature operating range:
150 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK190U65Z Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK190U65Z

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
149 to 190 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
130 W
Temperature operating range:
150 Degree C
Package:
TOLL
Applications:
Switching Power Supplies
more info
QS8J13 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - QS8J13

MOSFET from ROHM Semiconductor
-12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5.5 to 5.5 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
15 to 58 milliohm
Gate Source Voltage:
-8 to 0 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK18A50D Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK18A50D

MOSFET from Toshiba
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
220 to 270 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
50 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Regulator Applications
more info
QS5U27 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - QS5U27

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
160 to 340 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-25T
Industry:
Industrial, Commercial
Applications:
Load switch, DC/ DC conversion
more info
TK1K7A60F Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK1K7A60F

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1410 to 1700 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Power Supplies
more info
RCJ451N20 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RCJ451N20

MOSFET from ROHM Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-45 to 45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
42 to 125 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
211 W
Temperature operating range:
150 Degree C
Package:
TO-263S (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching Power Supply
more info
TK17A65W5 Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK17A65W5

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
190 to 230 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
SH8J62 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - SH8J62

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
40 to 84 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK100L60W Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK100L60W

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
15 to 18 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
797 W
Temperature operating range:
150 Degree C
Package:
TO-3P
Applications:
Switching Power Supplies
more info
R6006JND3 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - R6006JND3

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
720 to 936 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
86 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK17V65W Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK17V65W

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
175 to 210 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
156 W
Temperature operating range:
150 Degree C
Package:
DFN8x8
Applications:
Switching Voltage Regulators
more info
US5U30 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - US5U30

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1 to 1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
280 to 800 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-353T
Industry:
Industrial, Commercial
Applications:
Switching
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.