1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs from Manufacturers in Japan - Page 93

2,414 MOSFETs from 10 manufacturers meet your specification.
Filters (1)
Selected Filters:
2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 93 of 161
TK20G60W Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK20G60W

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
130 to 155 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
165 W
Temperature operating range:
150 Degree C
Package:
D2PAK
Applications:
Switching Voltage Regulators
more info
RCX330N25 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RCX330N25

MOSFET from ROHM Semiconductor
250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-33 to 33 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
77 to 230 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Automotive
Applications:
Switching Power Supply, Automotive Motor Drive, Au...
more info
TK1K0A60F Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK1K0A60F

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
830 to 1000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Power Supplies
more info
QS8J5 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - QS8J5

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
28 to 63 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK16V60W Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK16V60W

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
160 to 190 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
139 W
Temperature operating range:
150 Degree C
Package:
DFN8x8
Applications:
Switching Voltage Regulators
more info
US5U1 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - US5U1

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
170 to 340 milliohm
Gate Source Voltage:
12 V
Power Dissipation:
0.7 W
Temperature operating range:
150 Degree C
Package:
SOT-353T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK20J60W5 Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK20J60W5

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
150 to 175 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
165 W
Temperature operating range:
150 Degree C
Package:
TO-3P
Applications:
Switching Voltage Regulators
more info
US5U35 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - US5U35

MOSFET from ROHM Semiconductor
-45 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.7 to 0.7 A
Drain Source Breakdown Voltage:
-45 V
Drain Source Resistance:
600 to 1400 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-353T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK20J60W Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK20J60W

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
130 to 155 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
165 W
Temperature operating range:
150 Degree C
Package:
TO-3P
Applications:
Switching Voltage Regulators
more info
QS5U12 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - QS5U12

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
71 to 154 milliohm
Gate Source Voltage:
12 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-25T
Industry:
Industrial, Commercial
Applications:
Load switch, DC/ DC conversion
more info
TK19A45D Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK19A45D

MOSFET from Toshiba
450 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 A
Drain Source Breakdown Voltage:
450 V
Drain Source Resistance:
190 to 250 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
50 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Regulator Applications
more info
QS5U13 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - QS5U13

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
71 to 154 milliohm
Gate Source Voltage:
12 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-25T
Industry:
Industrial, Commercial
Applications:
Load switch, DC/ DC conversion
more info
TK20N60W Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK20N60W

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
130 to 155 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
165 W
Temperature operating range:
150 Degree C
Package:
TO-247
Applications:
Switching Voltage Regulators
more info
US6M1 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - US6M1

MOSFET from ROHM Semiconductor
-20 to 30 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Technology:
SiC
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-1.4 to 1.4 A
Drain Source Breakdown Voltage:
-20 to 30 V
Drain Source Resistance:
170 to 800 milliohm
Gate Source Voltage:
-12 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-363T
Industry:
Industrial, Commercial
Applications:
Power switching, DC / DC converter
more info
TK17A65W Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK17A65W

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
170 to 200 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.