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MOSFETs from Manufacturers in Japan - Page 89

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 89 of 161
TK28N65W5 Image
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Toshiba - TK28N65W5

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27.6 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
110 to 130 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
230 W
Temperature operating range:
150 Degree C
Package:
TO-247
Applications:
Switching Voltage Regulators
more info
QS5U26 Image
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ROHM Semiconductor - QS5U26

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
160 to 340 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-25T
Industry:
Industrial, Commercial
Applications:
Load switch, DC/ DC conversion
more info
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Toshiba - TK4K1A60F

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
3380 to 4100 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
UT6JA3 Image
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ROHM Semiconductor - UT6JA3

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
42 to 118 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
DFN2020-8D
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK25A60X5 Image
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Toshiba - TK25A60X5

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
120 to 140 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
QS5U34 Image
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ROHM Semiconductor - QS5U34

MOSFET from ROHM Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
130 to 310 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.9 W
Temperature operating range:
150 Degree C
Package:
SOT-25T
Industry:
Industrial, Commercial
Applications:
Load switch, DC/ DC conversion
more info
TK7A45DA Image
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Toshiba - TK7A45DA

MOSFET from Toshiba
450 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.5 A
Drain Source Breakdown Voltage:
450 V
Drain Source Resistance:
1000 to 1200 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Regulator Applications
more info
QS6U24 Image
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ROHM Semiconductor - QS6U24

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1 to 1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
300 to 800 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK3A60DA Image
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Toshiba - TK3A60DA

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
2200 to 2800 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Regulator Applications
more info
RCX080N25 Image
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ROHM Semiconductor - RCX080N25

MOSFET from ROHM Semiconductor
250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
460 to 1280 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Automotive
Applications:
Switching Power Supply, Automotive Motor Drive, Au...
more info
TK5A45DA Image
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Toshiba - TK5A45DA

MOSFET from Toshiba
450 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
450 V
Drain Source Resistance:
1520 to 1750 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
RCJ220N25 Image
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ROHM Semiconductor - RCJ220N25

MOSFET from ROHM Semiconductor
250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-22 to 22 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
105 to 320 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
166 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Automotive
Applications:
Switching Power Supply, Automotive Motor Drive, Au...
more info
TK25V60X Image
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Toshiba - TK25V60X

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
110 to 135 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
180 W
Temperature operating range:
150 Degree C
Package:
DFN8x8
Applications:
Switching Voltage Regulators
more info
SH8J65 Image
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ROHM Semiconductor - SH8J65

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
21.5 to 40.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK31E60W Image
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Toshiba - TK31E60W

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
73 to 88 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
230 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
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