MOSFETs from Manufacturers in Switzerland - Page 30

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Page 30 of 77
- 25 to 25 V, 17 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
340 to 378 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 34 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
198 to 220 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 32 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
470 to 550 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
- 25 to 25 V, 52.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
74 to 91 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 57 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
78 to 88 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications, LLC converters, resonant c...
more info
-30 to 30 V, 49 to 68 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
480 to 520 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 27 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
280 to 360 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
90 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 11.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
3200 to 3600 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 39 to 54 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
250 to 290 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
192 W
Temperature operating range:
-65 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 9.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.6 A
Drain Source Breakdown Voltage:
450 V
Drain Source Resistance:
3300 to 4000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-223
Applications:
Switching applications
more info
- 25 to 25 V, 72.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
58 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
48 to 59 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
240 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-LL
Applications:
Switching applications
more info
-30 to 30 V, 16.9 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.4 A
Drain Source Breakdown Voltage:
520 V
Drain Source Resistance:
1220 to 1500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 34 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.5 A
Drain Source Breakdown Voltage:
620 V
Drain Source Resistance:
950 to 1200 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
90 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
135 to 158 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 28 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
300 to 350 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
160 W
Temperature operating range:
-65 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info

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