MOSFETs from Manufacturers in Switzerland - Page 27

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Page 27 of 77
- 25 to 25 V, 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
150 to 179 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 27 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
280 to 320 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
90 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 40 to 56 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
200 to 250 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
192 W
Temperature operating range:
-65 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 6.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1000 to 1250 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
6 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT223-2
Applications:
Switching applications
more info
-30 to 30 V, 75 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
450 to 500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
- 25 to 25 V, 23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
162 to 190 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
142 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-LL
Applications:
Switching applications, LLC converters, Boost PFC ...
more info
-30 to 30 V, 50 to 70 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
650 to 750 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
115 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 11 to 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.3 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
2800 to 3300 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 19 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
280 to 320 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 26 to 34 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1200 to 1600 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
- 25 to 25 V, 64 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
125 to 139 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
140 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1060 to 1200 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 30 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
400 to 450 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
160 W
Temperature operating range:
-65 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 53.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
68 to 80 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications, LLC converters, Boost PFC ...
more info
-30 to 30 V, 11 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
525 V
Drain Source Resistance:
2100 to 2600 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info

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