MOSFETs from Manufacturers in Switzerland - Page 26

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Page 26 of 77
-30 to 30 V, 70 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
250 to 295 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
190 W
Temperature operating range:
0 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 87 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
650 to 750 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
65 to 80 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
130 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 29 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
370 to 450 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
- 25 to 25 V, 34 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
130 to 160 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
170 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 35.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
156 to 190 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
170 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 44 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
200 to 220 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 45.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
108 to 125 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications, LLC converters, resonant c...
more info
- 25 to 25 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
230 to 278 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications, Tailored for very high fre...
more info
- 25 to 25 V, 65.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
46 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
67 to 76 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
320 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-LL
Applications:
Switching applications
more info
- 25 to 25 V, 82 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
67 to 78 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
210 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 39 to 54 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
250 to 290 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
-65 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
- 25 to 25 V, 19 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
310 to 365 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
- 25 to 25 V, 43 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
110 to 130 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
25 V, 20 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8.5 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
390 to 430 Milliohm
Gate Source Voltage:
25 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info

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