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MOSFETs from Manufacturers in United States - Page 12

9,086 MOSFETs from 25 manufacturers meet your specification.
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9,086 MOSFETs from 25 Manufacturers
9,086 Products from 25 Manufacturers
Page 12 of 606
iS20M8R8S1C Image
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iDEAL Semiconductor Devices - iS20M8R8S1C

MOSFET from iDEAL Semiconductor Devices
200 V, 77 to 110 A, 250 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
77 to 110 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
6.8 to 9.8 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 175 Degree C
Package:
PDFN 5x6
Industry:
Industrial, Commercial
Applications:
Motor control, Boost converters and SMPS control F...
more info
GSGP3R608 Image
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Good Ark Semiconductor - GSGP3R608

MOSFET from Good Ark Semiconductor
80 V, 89 to 140 A, 126 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
89 to 140 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
3 to 3.6 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
126 W
Temperature operating range:
-55 to 150 Degree C
Package:
PPAK
Industry:
Industrial, Commercial
Applications:
BMS, High frequency switch, Synchronous rectificat...
more info
SiEH4800EW-T1-GE3 Image
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Vishay - SiEH4800EW-T1-GE3

MOSFET from Vishay
80 V N-Channel Enhancement Mode Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
29 to 381 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
0.88 to 1.35 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
2.4 to 417 W
Temperature operating range:
-55 to 175 Degree C
Package:
PowerPAK
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, OR-ing, Motor drive con...
more info
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onsemi - NTMFS2D3N04XMT1G

MOSFET from onsemi
-20 to 20 V, 22.1 nC, N-Channel Enhancement Mode, MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
78 to 111 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.03 to 2.35 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
53 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Commercial, Industrial
Applications:
Motor Drive, Battery Protection, Oring
more info
P85GC28HP2F Image
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Shindengen America - P85GC28HP2F

MOSFET from Shindengen America
280 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
85 A
Drain Source Breakdown Voltage:
280 V
Drain Source Resistance:
35 to 45 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
430 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247AD
Industry:
Commercial, Industrial
more info
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Littelfuse - CPC3730CTR

MOSFET from Littelfuse
350 V, 35 ohm, 1.4 W, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Drain Source Breakdown Voltage:
350 V
Drain Source Resistance:
35 ohm
Gate Source Voltage:
±15 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 125 Degree C
Package:
SOT-89
Industry:
Industrial, Commercial
Applications:
Ignition Modules, Normally-On Switches, Solid Stat...
more info
DMWSH120H90SM4Q Image
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Diodes Incorporated - DMWSH120H90SM4Q

MOSFET from Diodes Incorporated
Automotive Qualified N-Channel SiC Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
97.5 milli-ohm
Power Dissipation:
235 W
Industry:
Automotive
Applications:
EV charging systems, High voltage DC-DC converters...
more info
EDB005M12TM4L Image
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Wolfspeed - EDB005M12TM4L

MOSFET from Wolfspeed
1200 V Automotive-Grade SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
320 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
4.6 to 11.2 milli-ohm
Gate Source Voltage:
-4 to 15 V
Temperature operating range:
-40 to 175 Degree C
Industry:
Automotive, Industrial, Commercial
Applications:
Traction Inverters
more info
DN2540N3-G P002 Image
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Microchip Technology - DN2540N3-G P002

MOSFET from Microchip Technology
400 V, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.12 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
17000 to 25000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92
Industry:
Commercial, Industrial
Applications:
Normally-on switches, Solid state relays, Converte...
more info
AONK40202 Image
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Alpha & Omega Semiconductor - AONK40202

MOSFET from Alpha & Omega Semiconductor
25 V N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
224 to 319 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
0.57 to 0.92 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
4.2 to 107 W
Package:
DFN3.3x3.3B-8L
Industry:
Commercial, Industrial
Applications:
Synchronous Rectification, DC-DC low side FET
more info
G3F65MT12K Image
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Navitas Semiconductor - G3F65MT12K

MOSFET from Navitas Semiconductor
1200 V Planar E-Mode SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 to 35 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
65 to 122 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
153 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Industrial, Commercial
Applications:
xEV-OBC and DC-DC, EV Fast Charging Infrastructure...
more info
G3R160MT12D Image
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GeneSiC Semiconductor - G3R160MT12D

MOSFET from GeneSiC Semiconductor
1200 V, 10 to 19 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 19 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
160 to 225 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
106 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, High Voltage, DC-DC converters, SM...
more info
UJ4C075060B7S Image
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Qorvo - UJ4C075060B7S

MOSFET from Qorvo
750 V, N-Channel Enhancement Mode SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 25.8 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
58 to 147 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
128 W
Temperature operating range:
-55 to 175 Degree C
Package:
D2PAK-7L
Industry:
Automotive, Industrial, Commercial
Applications:
EV charging, PV inverters, Switch mode power suppl...
more info
MCG052P10Y-TP Image
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Micro Commercial Components - MCG052P10Y-TP

MOSFET from Micro Commercial Components
-100 V P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-16 to -10.1 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
42 to 52 milli-ohm
Gate Source Voltage:
±25 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN
Industry:
Industrial, Commercial
more info
GCMS007C120S1-E1 Image
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SemiQ - GCMS007C120S1-E1

MOSFET from SemiQ
1200 V Silicon Carbide Power Module

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
135 to 189 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
7.3 to 13.6 milli-ohm
Gate Source Voltage:
-4.5 to 18 V
Power Dissipation:
536 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT-227
Industry:
Industrial, Commercial
Applications:
Photovoltaic Inverter, Battery charger, Server pow...
more info
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