MOSFETs from Manufacturers in United States - Page 18

9,086 MOSFETs from 25 manufacturers meet your specification.
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9,086 MOSFETs from 25 Manufacturers
9,086 Products from 25 Manufacturers
Page 18 of 606
-30 V, 50 mA, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
50 mA
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
350 ohm
Gate Source Voltage:
-2.5 to -6.5 V
Power Dissipation:
375 mW
Temperature operating range:
-55 to 150 Degree C
Package:
TO-72
Industry:
Industrial, Commercial
more info
200 V, 32 to 45 A, 125 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
32 to 45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
22 to 25 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 175 Degree C
Package:
PDFN
Industry:
Industrial, Commercial
Applications:
Motor control, Boost converters and SMPS control F...
more info
30 V N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
178 to 282 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.55 to 0.7 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
139 W
Temperature operating range:
-55 to 150 Degree C
Package:
PPAK
Industry:
Industrial, Commercial
more info
40 V N-Channel Enhancement Mode Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
795 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.34 to 0.47 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
536 W
Temperature operating range:
-55 to 175 Degree C
Package:
PowerPAK
Industry:
Commercial, Industrial
Applications:
Synchronous rectification, Automation, OR-ing and ...
more info
-20 to 20 V, 28 nC, N-Channel Enhancement Mode, MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 to 79 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.3 to 8.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
82 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFN8
Industry:
Commercial, Industrial
Applications:
Synchronous Rectification (SR) in DC-DC and AC-DC,...
more info
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1170 to 1400 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
65 W
Temperature operating range:
150 Degree C
Package:
FTO-220AG
Industry:
Commercial, Industrial
more info
AEC-Q101 Qualified P-Channel Enhancement Mode MOSFET

Product Specs

Transistor Polarity:
P-Channel
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-500 V
Drain Source Resistance:
4.2 ohms
Gate Source Voltage:
20 V
Power Dissipation:
58 W
Applications:
High-side switches, Push-pull amplifiers, DC chopp...
more info
-20 to 20 V, 6.8 to 13.7 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-6.9 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
45 to 65 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
1200 V, 540 to 630 A, Hex N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
540 to 630 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.1 to 4.2 milli-ohm
Gate Source Voltage:
-4 to 15 V
Power Dissipation:
1520 W
Temperature operating range:
-40 to 185 Degree C
Industry:
Automotive, Industrial, Commercial
Applications:
Automotive Traction Inverters, Commercial, Constru...
more info
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
520 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
298 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Military
more info
650 V, 26 to 37 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 to 37 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
40 to 61 milli-ohm
Gate Source Voltage:
-5 to 15 V
Power Dissipation:
113 W
Temperature operating range:
-55 to 175 Degree C
Industry:
Commercial, Industrial, Electric Vehicle
Applications:
EV Charger, UPS, Solar Inverters, SMPS, Motor Driv...
more info
1200 V N-Channel E-Mode SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 to 10 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
295 to 489 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
63 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Industrial, Commercial
Applications:
Auxiliary Power Supply, Solar Inverters, UPS, High...
more info
1200 V, 10 to 19 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 19 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
160 to 225 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, High Voltage, DC-DC converters, SM...
more info
750 V, N-Channel Enhancement Mode SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27.6 to 37.4 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
44 to 101 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
203 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Automotive, Industrial, Commercial
Applications:
EV charging, PV inverters, Switch mode power suppl...
more info
200 V N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 to 34 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
44 to 55 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
139 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN
Industry:
Industrial, Commercial
more info

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