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GaN Power Transistors from Manufacturers in United States - Page 10

223 GaN Power Transistors from 8 manufacturers meet your specification.
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223 GaN Power Transistors from 8 Manufacturers
223 Products from 8 Manufacturers
Page 10 of 15
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EPC Space - JANSH2N7685UFGC

GaN Power Transistor from EPC Space
300 V, 2.3 to 4 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
300 V
Drain Source Resistance:
490 milli-ohm
Continous Drain Current:
2.3 to 4 A
Total Charge:
2.6 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
more info
EPC2066 Image
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Efficient Power Conversion - EPC2066

GaN Power Transistor from Efficient Power Conversion
40 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
40 V
Drain Source Resistance:
0.8 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
639 A
Total Charge:
25 nC
Input Capacitance:
3539 to 4523 pF
Output Capacitance:
1670 to 1919 pF
Temperature operating range:
-40 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High Density DC-DC Conversion, Synchronous Rectifi...
Dimensions:
6.05 mm x 2.3 mm
more info
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EPC Space - JANSH2N7668UFBC

GaN Power Transistor from EPC Space
100 V, 19 to 30 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
100 V
Drain Source Resistance:
15 milli-ohm
Continous Drain Current:
19 to 30 A
Total Charge:
11 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
more info
EPC7007 Image
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Efficient Power Conversion - EPC7007

GaN Power Transistor from Efficient Power Conversion
200 V Radiation Hardened GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
17 to 25 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
80 A
Total Charge:
5.4 nC
Input Capacitance:
525 pF
Output Capacitance:
256 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
DC-DC power, motor drives, lidar, ion thrusters, C...
Dimensions:
3.6 mm x 1.6 mm
more info
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EPC Space - JANSH2N7671UFAC

GaN Power Transistor from EPC Space
100 V, 3 to 5 A, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
100 V
Drain Source Resistance:
50 milli-ohm
Continous Drain Current:
3 to 5 A
Total Charge:
2.2 C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-A
more info
EPC2221 Image
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Efficient Power Conversion - EPC2221

GaN Power Transistor from Efficient Power Conversion
100 V GaN Power Transistor for Multi-Channel Lidar Applications

Product Specs

Configuration:
Dual
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
58 milliohms
Continous Drain Current:
5 A
Pulsed Drain Current:
20 A
Total Charge:
0.8 to 1.2 nC
Input Capacitance:
94 to 150 pF
Output Capacitance:
63 to 72 pF
Temperature operating range:
-40 to 150 degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Automotive, High Frequency DC-DC Conversion, Synch...
Dimensions:
1.35 x 1.35 mm
more info
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EPC Space - EPC7020GSH

GaN Power Transistor from EPC Space
200 V, 9.5 to 14.5 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
9.5 to 14.5 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
200 A
Total Charge:
13.5 nC
Input Capacitance:
1313 pF
Output Capacitance:
640 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8 x 5.6 mm
more info
EPC7014 Image
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Efficient Power Conversion - EPC7014

GaN Power Transistor from Efficient Power Conversion
60 V Radiation-Hard GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.6 V
Drain Source Voltage:
60 V
Drain Source Resistance:
240 milli-ohm
Continous Drain Current:
2.4 A
Pulsed Drain Current:
4 A
Total Charge:
142 to 184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
17 to 26 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Satellite EPS & avionics, Deep space probes, High ...
Dimensions:
0.9 x 0.9 mm
more info
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EPC Space - EPC7018DSH

GaN Power Transistor from EPC Space
100 V, 5.2 to 6 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.2 to 6 milli-ohm
Continous Drain Current:
74 A
Pulsed Drain Current:
345 A
Total Charge:
11.7 nC
Input Capacitance:
1240 pF
Output Capacitance:
740 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-D
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8 x 5.6 mm
more info
EPC2050 Image
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Efficient Power Conversion - EPC2050

GaN Power Transistor from Efficient Power Conversion
350 V Enhancement Mode GaN Power Transistor

Product Specs

Gate Threshold Voltage:
1.3 V
Drain Source Voltage:
350 V
Drain Source Resistance:
55 milliohms
Continous Drain Current:
6.3 A
Pulsed Drain Current:
26 A
Total Charge:
2.9 to 4 nC
Input Capacitance:
423 to 628 pF
Output Capacitance:
81 to 122 pF
Temperature operating range:
-40 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Class D Audio, LED Lighting, Lidar, Motor Drive, H...
Dimensions:
1.95 x 1.95 mm
more info
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EPC Space - EPC7003ASH

GaN Power Transistor from EPC Space
100 V, 42 to 45 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
42 to 45 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
42 A
Total Charge:
2.2 nC
Input Capacitance:
233 pF
Output Capacitance:
170 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-A
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 mm
more info
EPC7019 Image
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Efficient Power Conversion - EPC7019

GaN Power Transistor from Efficient Power Conversion
Rad-Hard GaN Power Transistor for Deep Space Applications

Product Specs

Industry:
Space
Gate Threshold Voltage:
800 to 2500 mV
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 degree C
Package Type:
Die
Applications:
commercial satellite EPS & avionics, deep space pr...
Dimensions:
6.05 x 2.3 mm
more info
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EPC Space - EPC7004BSH

GaN Power Transistor from EPC Space
100 V, 13 to 15 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
13 to 15 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
160 A
Total Charge:
11 nC
Input Capacitance:
1000 pF
Output Capacitance:
700 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.7 x 3.9 mm
more info
EPC2065 Image
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Efficient Power Conversion - EPC2065

GaN Power Transistor from Efficient Power Conversion
80 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
80 V
Drain Source Resistance:
3.6 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
215 A
Total Charge:
9.4 to 12.2 nC
Input Capacitance:
1097 to 1449 pF
Output Capacitance:
534 to 801 pF
Temperature operating range:
-40 to 150 °C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
BLDC Motor Drives, Class-D Audio, DC-DC Converters...
Dimensions:
3.5 x 1.95 mm
more info
EPC7030G Image
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EPC Space - EPC7030G

GaN Power Transistor from EPC Space
300 V Radiation Hard eGaN Power Transistor

Product Specs

Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
300 V
Drain Source Resistance:
32 milli-ohm
Continous Drain Current:
50 A
Pulsed Drain Current:
200 A
Total Charge:
15 nC
Input Capacitance:
1155 pF
Output Capacitance:
235 pF
Temperature operating range:
-55 to 150 Degree C
Qualification:
MIL-STD-750
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
Dimensions:
8 x 5.6 mm
more info
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