GaN Power Transistors from Manufacturers in United States - Page 11

223 GaN Power Transistors from 8 manufacturers meet your specification.
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223 GaN Power Transistors from 8 Manufacturers
223 Products from 8 Manufacturers
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40 V, 2.25 mOhm E-mode GaN Transistor

Product Specs

Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.60 to 2.25 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
422 A
more info
40 V, 3.7 to 5 milli-ohm, GaN Transistor

Product Specs

Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.7 to 5 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-D
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8 x 5.6 mm
more info
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
10 to 13.5 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
75 A
Total Charge:
3.2 to 4 nC
Input Capacitance:
339 to 407 pF
Output Capacitance:
238 to 357 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
Lidar/Pulsed Power Applications, High Power Densit...
Dimensions:
2.1 x 1.6 mm
more info
Radiation Hard GaN Power Transistor for Avionics & Deep Space Applications

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
200 V
Drain Source Resistance:
28 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
80 A
Total Charge:
5.4 nC
Input Capacitance:
525 pF
Output Capacitance:
256 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.461 x 3.683 mm
more info
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
7 to 10 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
200 A
Total Charge:
8.8 to 11 nC
Input Capacitance:
950 to 1140 pF
Output Capacitance:
450 to 680 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC Conversion, Motor Drive, Indu...
Dimensions:
4.6 x 2.6 mm
more info
100 V Radiation-Hardened GaN Power Transistor for Satellite Applications

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.2 milli-ohm
Continous Drain Current:
95 A
Pulsed Drain Current:
345 A
Total Charge:
11.7 nC
Input Capacitance:
1240 pF
Output Capacitance:
740 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8 x 5.6 x 1.6 mm
more info
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
231 A
Total Charge:
10.5 to 13.6 nC
Input Capacitance:
1189 to 1570 pF
Output Capacitance:
562 to 843 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
DC-DC Converters, Isolated DC-DC Converters, Lidar...
Dimensions:
3.5 x 1.95 mm
more info
200 V, 18 A, GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
21 to 28 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
72 A
Total Charge:
5 to 7 nC
Input Capacitance:
637 to 900 pF
Output Capacitance:
300 to 359 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.7 x 3.9 mm
more info
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.6 to 7 milli-ohm
Continous Drain Current:
16 A
Pulsed Drain Current:
130 A
Total Charge:
6 to 7.8 nC
Input Capacitance:
767 to 1016 pF
Output Capacitance:
295 to 443 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Open Rack Server Architectures, Lidar/Pulsed Power...
Dimensions:
2.5 x 1.5 mm
more info
40 V GaN Power Transistor for Space Applications

Product Specs

Configuration:
Dual
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.7 milliohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8.0 x 5.6 mm
more info
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
100 V
Drain Source Resistance:
4.4 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
125 A
Total Charge:
5.7 to 7.4 nC
Input Capacitance:
644 to 851 pF
Output Capacitance:
304 to 456 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
DC-DC Converters, Isolated DC-DC Converters, Lidar...
Dimensions:
2.5 x 1.5 mm
more info
100 V Radiation-Hard Enhancement Mode GaN Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
100 V
Drain Source Resistance:
12 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
120 A
Total Charge:
8.3 to 11 nC
Input Capacitance:
850 to 1000 pF
Output Capacitance:
500 to 700 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.4 x 3.6 x 1.9 mm
more info
120 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Dual
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
120 V
Drain Source Resistance:
80 to 110 milli-ohm
Continous Drain Current:
3.4 A
Pulsed Drain Current:
20 A
Total Charge:
0.8 to 1.1 nC
Input Capacitance:
85 to 100 pF
Output Capacitance:
45 to 70 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Ultra High Frequency DC-DC Conversion, Wireless Po...
Dimensions:
1.35 x 1.35 mm
more info
100 V, 5 A, GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
36 to 45 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
20 A
Total Charge:
1.7 to 2.2 nC
Input Capacitance:
207 to 233 pF
Output Capacitance:
133 to 170 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 mm
more info
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
6 to 8 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
213 A
Total Charge:
11.1 to 13.8 nC
Input Capacitance:
1155 to 1386 pF
Output Capacitance:
641 to 962 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC/DC Conversion, Multi-level AC/DC...
Dimensions:
4.6 x 2.6 mm
more info

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