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GaN Power Transistors from Manufacturers in United States - Page 12

223 GaN Power Transistors from 8 manufacturers meet your specification.
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223 GaN Power Transistors from 8 Manufacturers
223 Products from 8 Manufacturers
Page 12 of 15
FBG20N04A Image
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EPC Space - FBG20N04A

GaN Power Transistor from EPC Space
200 V Radiation-Hardened GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.8 V
Drain Source Voltage:
200 V
Drain Source Resistance:
68 to 130 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
16 A
Total Charge:
1.6 to 3 nC
Input Capacitance:
106 to 150 pF
Output Capacitance:
72 to 90 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 mm
more info
EPC2051 Image
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Efficient Power Conversion - EPC2051

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
20 to 25 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
37 A
Total Charge:
1.8 to 2.3 nC
Input Capacitance:
224 to 297 pF
Output Capacitance:
86 to 129 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Open Rack Server Architectures, Lidar/Pulsed Power...
Dimensions:
0.85 x 1.3 mm
more info
EPC7014UB Image
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EPC Space - EPC7014UB

GaN Power Transistor from EPC Space
60 V Radiation Hard GaN Power Transistor

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
580 milli-ohm
Continous Drain Current:
1 A
Pulsed Drain Current:
4 A
Total Charge:
0.142 to 0.184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
0.1 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Commercial Satellite EPS & Avionics, Deep Space Pr...
Dimensions:
2.9 x 2.4 x 1.2 mm
more info
EPC2033 Image
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Efficient Power Conversion - EPC2033

GaN Power Transistor from Efficient Power Conversion
150 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
150 V
Drain Source Resistance:
5 to 7 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
260 A
Total Charge:
12 to 15 nC
Input Capacitance:
1160 to 1400 pF
Output Capacitance:
480 to 720 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC conversion, Motor Drive, Indu...
Dimensions:
4.6 x 2.6 mm
more info
FBG30N04CSH Image
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EPC Space - FBG30N04CSH

GaN Power Transistor from EPC Space
300 V Radiation Hard eGaN HEMT for Satellite Applications

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.8 V
Drain Source Voltage:
300 V
Drain Source Resistance:
210 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
12 A
Total Charge:
1.6 to 2.6 nC
Input Capacitance:
380 to 450 pF
Output Capacitance:
48 to 60 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Commercial Satellite EPS & Avionics, Deep Space Pr...
Dimensions:
4.445 x 4.445 x 2.286 mm
more info
EPC2053 Image
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Efficient Power Conversion - EPC2053

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
3.1 to 3.8 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
246 A
Total Charge:
11.4 to 14.8 nC
Input Capacitance:
1453 to 1924 pF
Output Capacitance:
642 to 963 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
48 V Servers, Lidar/Pulsed Power, Isolated Power S...
Dimensions:
3.5 x 2 mm
more info
FBG04N08A Image
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EPC Space - FBG04N08A

GaN Power Transistor from EPC Space
40 V Radiation Hard GaN HEMT for Deep Space Applications

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
28 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
32 A
Total Charge:
2.2 to 2.8 nC
Input Capacitance:
283 to 312 pF
Output Capacitance:
170 to 270 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 x 2.29 mm
more info
EPC2040 Image
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Efficient Power Conversion - EPC2040

GaN Power Transistor from Efficient Power Conversion
15 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
15 V
Drain Source Resistance:
24 to 30 milli-ohm
Continous Drain Current:
3.4 A
Pulsed Drain Current:
28 A
Total Charge:
0.745 to 0.925 nC
Input Capacitance:
86 to 105 pF
Output Capacitance:
67 to 100 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
DC-DC Converters, Pulsed Laser Driver, LiDAR/Pulse...
Dimensions:
0.85 x 1.2 mm
more info
FBG04N30B Image
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EPC Space - FBG04N30B

GaN Power Transistor from EPC Space
40 V Radiation Hard eGaN Power Switching HEMT

Product Specs

Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
5 to 8.5 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
120 A
Total Charge:
8.9 to 11.4 nC
Input Capacitance:
1100 to 1300 pF
Output Capacitance:
650 to 900 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.7 x 3.9 mm
more info
EPC2010C Image
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Efficient Power Conversion - EPC2010C

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
18 to 25 milli-ohm
Continous Drain Current:
22 A
Pulsed Drain Current:
90 A
Total Charge:
3.7 to 5.3 nC
Input Capacitance:
380 to 540 pF
Output Capacitance:
240 to 320 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Speed DC-DC conversion, Class-D Audio, Lidar
Dimensions:
3.6 x 1.6 mm
more info
EPC2052 Image
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Efficient Power Conversion - EPC2052

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
100 V
Drain Source Resistance:
10 milli-ohm
Continous Drain Current:
8.2 A
Pulsed Drain Current:
74 A
Total Charge:
3.5 to 4.5 nC
Input Capacitance:
441 to 584 pF
Output Capacitance:
195 to 293 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
48 V Servers, Lidar/Pulsed Power, Isolated Power S...
Dimensions:
1.5 x 1.5 mm
more info
EPC2032 Image
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Efficient Power Conversion - EPC2032

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
3 to 4 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
340 A
Total Charge:
12 to 15 nC
Input Capacitance:
1270 to 1530 pF
Output Capacitance:
800 to 1200 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High-Frequency DC-DC Conversion, Industrial Automa...
Dimensions:
4.6 x 2.6 mm
more info
EPC2022 Image
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Efficient Power Conversion - EPC2022

GaN Power Transistor from Efficient Power Conversion
100 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 to 3.2 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
390 A
Total Charge:
13 to 16 nC
Input Capacitance:
1400 to 1690 pF
Output Capacitance:
840 to 1260 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High-Frequency DC-DC Conversion, Industrial Automa...
Dimensions:
6.05 x 2.3 mm
more info
EPC2019 Image
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Efficient Power Conversion - EPC2019

GaN Power Transistor from Efficient Power Conversion
200 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
36 to 50 milli-ohm
Continous Drain Current:
8.5 A
Pulsed Drain Current:
42 A
Total Charge:
1.8 to 2.5 nC
Input Capacitance:
200 to 270 pF
Output Capacitance:
110 to 150 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Speed DC-DC conversion, Class-D Audio, High F...
Dimensions:
2.77 x 0.95 mm
more info
EPC2059 Image
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Efficient Power Conversion - EPC2059

GaN Power Transistor from Efficient Power Conversion
170 V Enhancement-Mode GaN Power Transistor

Product Specs

Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
170 V
Drain Source Resistance:
6.8 to 9 milli-ohm
Continous Drain Current:
24 A
Pulsed Drain Current:
102 A
Total Charge:
5.7 to 7.4 nC
Input Capacitance:
633 to 836 pF
Output Capacitance:
267 to 401 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
DC-DC Converters, Sync rectification for AC/DC & D...
Dimensions:
2.8 x 1.4 mm
more info
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