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MOSFETs from Manufacturers in Japan - Page 128

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 128 of 161
RHP020N06 Image
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ROHM Semiconductor - RHP020N06

MOSFET from ROHM Semiconductor
60 V, 14 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
150 to 340 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT89
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK5R1P08QM Image
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Toshiba - TK5R1P08QM

MOSFET from Toshiba
80 V, 56 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
105 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.2 to 7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Package:
DPAK
Industry:
Aerospace, Industrial, Medical, Military
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RX3L07BGN Image
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ROHM Semiconductor - RX3L07BGN

MOSFET from ROHM Semiconductor
60 V, 55 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-70 to 70 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.2 to 10.9 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
96 W
Temperature operating range:
0 to 150 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK7R0E08QM Image
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Toshiba - TK7R0E08QM

MOSFET from Toshiba
80 V, 39 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
82 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
5.5 to 7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
87 W
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RSH070N05 Image
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ROHM Semiconductor - RSH070N05

MOSFET from ROHM Semiconductor
45 V, 16.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
18 to 35 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
0 to 150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK4R3E06PL Image
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Toshiba - TK4R3E06PL

MOSFET from Toshiba
60 V, 48.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
106 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.3 to 7.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
87 W
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RF4L070BG Image
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ROHM Semiconductor - RF4L070BG

MOSFET from ROHM Semiconductor
60 V, 7.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
21 to 40 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
0 to 150 Degree C
Package:
DFN20208S
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPCC8138 Image
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Toshiba - TPCC8138

MOSFET from Toshiba
-20 V, 63 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-18 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
6 to 42 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
39 W
Package:
TSON Advance
Industry:
Industrial, Military, Automotive
Applications:
Power Management Switches
more info
RUC002N05 Image
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ROHM Semiconductor - RUC002N05

MOSFET from ROHM Semiconductor
50 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 to 0.2 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1600 to 7200 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.35 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT23
Industry:
Industrial, Commercial
Applications:
Switching circuits, Low-side load switch, Relay dr...
more info
TK6R9P08QM Image
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Toshiba - TK6R9P08QM

MOSFET from Toshiba
80 V, 39 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
83 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
5.5 to 9.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
89 W
Package:
DPAK
Industry:
Aerospace, Industrial, Medical, Military
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RF4E080BN Image
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ROHM Semiconductor - RF4E080BN

MOSFET from ROHM Semiconductor
30 V, 14.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-8 to 8 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
13.5 to 24.6 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
0 to 150 Degree C
Package:
DFN20208S
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPH12008NH Image
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Toshiba - TPH12008NH

MOSFET from Toshiba
80 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
44 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
10.1 to 12.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
48 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
DC-DC Converters, Switching Voltage Regulators, Mo...
more info
RXH125N03 Image
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ROHM Semiconductor - RXH125N03

MOSFET from ROHM Semiconductor
30 V, 12.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-12.5 to 12.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
7.5 to 14 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
0 to 150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPH1500CNH1 Image
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Toshiba - TPH1500CNH1

MOSFET from Toshiba
150 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
74 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
13 to 15.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RYM002N05 Image
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ROHM Semiconductor - RYM002N05

MOSFET from ROHM Semiconductor
50 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 to 0.2 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1600 to 9000 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT723
Industry:
Industrial, Commercial
Applications:
Switching
more info
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