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MOSFETs from Manufacturers in Japan - Page 130

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 130 of 161
RQ6E045SN Image
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ROHM Semiconductor - RQ6E045SN

MOSFET from ROHM Semiconductor
30 V, 6.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
27 to 38 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPH2R608NH Image
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Toshiba - TPH2R608NH

MOSFET from Toshiba
75 V, 72 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
168 A
Drain Source Breakdown Voltage:
75 V
Drain Source Resistance:
2.1 to 2.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
142 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RUM001L02 Image
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ROHM Semiconductor - RUM001L02

MOSFET from ROHM Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.1 to 0.1 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
2500 to 18000 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT723
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPCC8137 Image
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Toshiba - TPCC8137

MOSFET from Toshiba
-20 V, 43 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-13 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
8 to 52 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
30 W
Package:
TSON Advance
Industry:
Industrial, Military, Automotive
Applications:
Power Management Switches
more info
RF4G100BG Image
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ROHM Semiconductor - RF4G100BG

MOSFET from ROHM Semiconductor
40 V, 10.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-10 to 10 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
10.9 to 23 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
0 to 150 Degree C
Package:
DFN20208S
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPCA8109 Image
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Toshiba - TPCA8109

MOSFET from Toshiba
-30 V, 56 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-24 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
7 to 13 milliohm
Gate Source Voltage:
-25 to 20 V
Power Dissipation:
30 W
Package:
SOP-8
Industry:
Industrial, Military, Automotive
Applications:
Lithium Ion Battery Applications, Power Management...
more info
RXH090N03 Image
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ROHM Semiconductor - RXH090N03

MOSFET from ROHM Semiconductor
30 V, 6.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-9 to 9 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
12 to 27 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
0 to 150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPH1110FNH Image
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Toshiba - TPH1110FNH

MOSFET from Toshiba
250 V, 11 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
95 to 112 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
57 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RF4E100AJ Image
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ROHM Semiconductor - RF4E100AJ

MOSFET from ROHM Semiconductor
30 V, 13 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-10 to 10 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
99.4 to 17.9 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Temperature operating range:
0 to 150 Degree C
Package:
DFN20208S
Industry:
Industrial, Commercial
Applications:
Switching, DC/DC converter, Battery switch
more info
TPH2R408QM Image
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Toshiba - TPH2R408QM

MOSFET from Toshiba
80 V, 87 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.9 to 3.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
210 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RS1E321GN Image
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ROHM Semiconductor - RS1E321GN

MOSFET from ROHM Semiconductor
30 V, 42.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.4 to 2.9 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
34 W
Temperature operating range:
0 to 150 Degree C
Package:
HSOP8S
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPCA8128 Image
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Toshiba - TPCA8128

MOSFET from Toshiba
-30 V, 115 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-34 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
3.7 to 6.7 milliohm
Gate Source Voltage:
-25 to 20 V
Power Dissipation:
45 W
Package:
SOP-8
Industry:
Industrial, Military, Automotive
Applications:
Lithium Ion Battery Applications, Power Management...
more info
RVQ040N05 Image
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ROHM Semiconductor - RVQ040N05

MOSFET from ROHM Semiconductor
45 V, 8.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
38 to 74 Milliohm
Gate Source Voltage:
-21 to 21 V
Power Dissipation:
1.25 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT457T
Industry:
Industrial, Commercial
Applications:
DC/DC converters
more info
TK5R1A08QM Image
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Toshiba - TK5R1A08QM

MOSFET from Toshiba
80 V, 54 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.1 to 7.1 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RSQ015N06 Image
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ROHM Semiconductor - RSQ015N06

MOSFET from ROHM Semiconductor
60 V, 2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
210 to 350 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT457T
Industry:
Industrial, Commercial
Applications:
DC/DC converters
more info
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