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MOSFETs from Manufacturers in Japan - Page 131

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 131 of 161
TPH2R306NH Image
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Toshiba - TPH2R306NH

MOSFET from Toshiba
60 V, 72 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
130 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1.9 to 4.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
78 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RF4E080GN Image
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ROHM Semiconductor - RF4E080GN

MOSFET from ROHM Semiconductor
30 V, 5.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-8 to 8 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
13.5 to 31.2 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
0 to 150 Degree C
Package:
DFN20208S
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPH1R204PL Image
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Toshiba - TPH1R204PL

MOSFET from Toshiba
40 V, 74 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
246 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1 to 2.1 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
132 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RF4E110GN Image
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ROHM Semiconductor - RF4E110GN

MOSFET from ROHM Semiconductor
30 V, 7.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-11 to 11 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
8.7 to 16.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
0 to 150 Degree C
Package:
DFN20208S
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK8P25DA Image
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Toshiba - TK8P25DA

MOSFET from Toshiba
250 V, 16 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.5 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
41 to 50 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
55 W
Package:
DPAK
Industry:
Industrial, Military, Automotive
Applications:
Switching Voltage Regulators
more info
RF6E065BN Image
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ROHM Semiconductor - RF6E065BN

MOSFET from ROHM Semiconductor
30 V, 16.3 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 to 6.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
12.9 to 22.7 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT363T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPCC8105 Image
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Toshiba - TPCC8105

MOSFET from Toshiba
-30 V, 76 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-23 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
6 to 10.4 milliohm
Gate Source Voltage:
-25 to 20 V
Power Dissipation:
30 W
Package:
TSON Advance
Industry:
Industrial, Military, Automotive
Applications:
Lithium Ion Battery Applications, Power Management...
more info
RF4E070BN Image
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ROHM Semiconductor - RF4E070BN

MOSFET from ROHM Semiconductor
30 V, 8.9 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
22 to 40 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
0 to 150 Degree C
Package:
DFN20208S
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK6R7A10PL Image
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Toshiba - TK6R7A10PL

MOSFET from Toshiba
100 V, 58 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
5.7 to 10.1 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
42 W
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RF4E110BN Image
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ROHM Semiconductor - RF4E110BN

MOSFET from ROHM Semiconductor
30 V, 24 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-11 to 11 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
8.5 to 15.4 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
0 to 150 Degree C
Package:
DFN20208S
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPCA8120 Image
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Toshiba - TPCA8120

MOSFET from Toshiba
-30 V, 190 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-45 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
2.4 to 4 milliohm
Gate Source Voltage:
-25 to 20 V
Power Dissipation:
45 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
Lithium-Ion Secondary Batteries, Power Management ...
more info
RUR040N02 Image
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ROHM Semiconductor - RUR040N02

MOSFET from ROHM Semiconductor
20 V, 8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
25 to 110 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TPH1R403NL Image
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Toshiba - TPH1R403NL

MOSFET from Toshiba
30 V, 46 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.2 to 2.1 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
64 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RU1L002SN Image
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ROHM Semiconductor - RU1L002SN

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.25 to 0.25 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1700 to 12000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.25 W
Temperature operating range:
0 to 150 Degree C
Package:
SOT323FL
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK8R2A06PL Image
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Toshiba - TK8R2A06PL

MOSFET from Toshiba
60 V, 28 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
6.1 to 11.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
36 W
Package:
TO-220
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
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