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MOSFETs from Manufacturers in Japan - Page 75

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 75 of 161
TK7A65D Image
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Toshiba - TK7A65D

MOSFET from Toshiba
650 V, 24 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
800 to 980 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Package:
TO-220
Applications:
Switching Regulator Applications
more info
R6507ENJ Image
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ROHM Semiconductor - R6507ENJ

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
605 to 665 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
78 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK8A55DA Image
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Toshiba - TK8A55DA

MOSFET from Toshiba
550 V, 16 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.5 A
Drain Source Breakdown Voltage:
550 V
Drain Source Resistance:
900 to 1070 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Package:
TO-220
Applications:
Switching Regulator Applications
more info
R8002KND3 Image
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ROHM Semiconductor - R8002KND3

MOSFET from ROHM Semiconductor
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1.6 to 1.6 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
3500 to 4200 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK7Q65W Image
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Toshiba - TK7Q65W

MOSFET from Toshiba
650 V, 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.8 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
660 to 800 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Package:
IPAK
Applications:
Switching Voltage Regulators
more info
R6004KNJ Image
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ROHM Semiconductor - R6004KNJ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
900 to 1360 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
58 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK5P53D Image
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Toshiba - TK5P53D

MOSFET from Toshiba
525 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
525 V
Drain Source Resistance:
1200 to 1500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
R6520ENJ Image
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ROHM Semiconductor - R6520ENJ

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-20 to 20 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
185 to 205 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
231 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK39J60W5 Image
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Toshiba - TK39J60W5

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
62 to 74 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
270 W
Temperature operating range:
150 Degree C
Package:
TO-3P
Applications:
Switching Voltage Regulators
more info
R6524KNJ Image
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ROHM Semiconductor - R6524KNJ

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-24 to 24 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
160 to 185 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
245 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK25Z60X Image
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Toshiba - TK25Z60X

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
105 to 125 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
180 W
Temperature operating range:
150 Degree C
Package:
TO-247-4L
Applications:
Switching Voltage Regulators
more info
R6011KNJ Image
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ROHM Semiconductor - R6011KNJ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-11 to 11 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
340 to 720 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
124 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK35A65W Image
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Toshiba - TK35A65W

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
68 to 80 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
R6511ENJ Image
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ROHM Semiconductor - R6511ENJ

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-11 to 11 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
360 to 400 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
124 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK560P60Y Image
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Toshiba - TK560P60Y

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
43 to 56 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
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