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MOSFETs from Manufacturers in Japan - Page 78

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 78 of 161
R6504ENJ Image
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ROHM Semiconductor - R6504ENJ

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
955 to 1050 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
58 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK5A60D Image
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Toshiba - TK5A60D

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1200 to 1430 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Regulator Applications
more info
R6509ENJ Image
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ROHM Semiconductor - R6509ENJ

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-9 to 9 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
530 to 585 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
94 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK25E60X5 Image
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Toshiba - TK25E60X5

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
120 to 140 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
180 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
R8006KNX Image
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ROHM Semiconductor - R8006KNX

MOSFET from ROHM Semiconductor
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
750 to 900 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
52 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK4Q60DA Image
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Toshiba - TK4Q60DA

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1700 to 2200 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Temperature operating range:
150 Degree C
Package:
New PW-Mold2
Applications:
Switching Voltage Regulators
more info
R6004JNJ Image
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ROHM Semiconductor - R6004JNJ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1100 to 1430 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK28V65W Image
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Toshiba - TK28V65W

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27.6 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
99 to 120 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
240 W
Temperature operating range:
150 Degree C
Package:
DFN8x8
Applications:
Switching Voltage Regulators
more info
R6024KNJ Image
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ROHM Semiconductor - R6024KNJ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-24 to 24 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
150 to 320 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
245 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK4P60DA Image
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Toshiba - TK4P60DA

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1700 to 2200 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
R6011ENJ Image
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ROHM Semiconductor - R6011ENJ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-11 to 11 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
340 to 720 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
124 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK39N60W Image
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Toshiba - TK39N60W

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
55 to 65 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
270 W
Temperature operating range:
150 Degree C
Package:
TO-247
Applications:
Switching Voltage Regulators
more info
R6007JNJ Image
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ROHM Semiconductor - R6007JNJ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
600 to 780 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
96 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK28V65W5 Image
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Toshiba - TK28V65W5

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27.6 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
115 to 140 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
240 W
Temperature operating range:
150 Degree C
Package:
DFN8x8
Applications:
Switching Voltage Regulators
more info
R8009KNX Image
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ROHM Semiconductor - R8009KNX

MOSFET from ROHM Semiconductor
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-9 to 9 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
500 to 600 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
59 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
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