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MOSFETs from Manufacturers in Japan - Page 79

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 79 of 161
TK25N60X5 Image
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Toshiba - TK25N60X5

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
120 to 140 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
180 W
Temperature operating range:
150 Degree C
Package:
TO-247
Applications:
Switching Voltage Regulators
more info
R6507KNJ Image
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ROHM Semiconductor - R6507KNJ

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
605 to 665 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
78 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK560A65Y Image
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Toshiba - TK560A65Y

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
43 to 56 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
R6504KNJ Image
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ROHM Semiconductor - R6504KNJ

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
955 to 1050 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
58 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK28A65W Image
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Toshiba - TK28A65W

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27.6 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
94 to 110 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
R8006KND3 Image
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ROHM Semiconductor - R8006KND3

MOSFET from ROHM Semiconductor
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
750 to 900 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
83 W
Temperature operating range:
150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK35N65W Image
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Toshiba - TK35N65W

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
68 to 80 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
270 W
Temperature operating range:
150 Degree C
Package:
TO-247
Applications:
Switching Voltage Regulators
more info
R6018JNJ Image
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ROHM Semiconductor - R6018JNJ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-18 to 18 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
200 to 286 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
220 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK62J60W Image
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Toshiba - TK62J60W

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
61.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
33 to 40 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
400 W
Temperature operating range:
150 Degree C
Package:
TO-3P
Applications:
Switching Voltage Regulators
more info
R8002ANJ Image
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ROHM Semiconductor - R8002ANJ

MOSFET from ROHM Semiconductor
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
3300 to 7200 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
62 W
Temperature operating range:
150 Degree C
Package:
TO-263S
Industry:
Industrial, Commercial
Applications:
Switching Power Supply
more info
TK49N65W5 Image
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Toshiba - TK49N65W5

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
49.2 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
51 to 57 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
400 W
Temperature operating range:
150 Degree C
Package:
TO-247
Applications:
Switching Voltage Regulators
more info
R8008ANJ Image
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ROHM Semiconductor - R8008ANJ

MOSFET from ROHM Semiconductor
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-8 to 8 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
790 to 1540 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
195 W
Temperature operating range:
150 Degree C
Package:
TO-263S
Industry:
Industrial, Commercial
Applications:
Switching Power Supply
more info
TK3P50D Image
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Toshiba - TK3P50D

MOSFET from Toshiba
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
2300 to 3000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
R8002KNX Image
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ROHM Semiconductor - R8002KNX

MOSFET from ROHM Semiconductor
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1.6 to 1.6 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
3500 to 4200 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
28 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK62J60W5 Image
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Toshiba - TK62J60W5

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
61.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
36 to 45 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
400 W
Temperature operating range:
150 Degree C
Package:
TO-3P
Applications:
Switching Voltage Regulators
more info
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