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MOSFETs from Manufacturers in Japan - Page 74

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 74 of 161
TK7P60W5 Image
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Toshiba - TK7P60W5

MOSFET from Toshiba
600 V, 16 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
504 to 670 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Package:
DPAK
Applications:
Switching Voltage Regulators, Motor Drivers
more info
2SJ599-ZK Image
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Renesas - 2SJ599-ZK

MOSFET from Renesas
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
60 to 111 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1 to 35 W
Package:
TO-252
Industry:
Commercial
more info
R8003KNX Image
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ROHM Semiconductor - R8003KNX

MOSFET from ROHM Semiconductor
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1500 to 1800 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
36 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK7J90E Image
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Toshiba - TK7J90E

MOSFET from Toshiba
900 V, 32 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
1600 to 2000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
200 W
Package:
TO-3P
Applications:
Switching Voltage Regulators
more info
2SJ518 Image
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Renesas - 2SJ518

MOSFET from Renesas
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
0.35 to 0.63 milliohm
Gate Source Voltage:
20 V
Package:
UPAK
Industry:
Commercial
more info
R6520KNJ Image
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ROHM Semiconductor - R6520KNJ

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-20 to 20 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
185 to 205 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
231 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK7A90E Image
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Toshiba - TK7A90E

MOSFET from Toshiba
900 V, 32 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
1600 to 2000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
TK8A60W5 Image
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Toshiba - TK8A60W5

MOSFET from Toshiba
600 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
440 to 540 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Package:
TO-220
Applications:
Switching Voltage Regulators, Motor Drivers
more info
R8003KND3 Image
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ROHM Semiconductor - R8003KND3

MOSFET from ROHM Semiconductor
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1500 to 1800 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
48 W
Temperature operating range:
150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK7P50D Image
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Toshiba - TK7P50D

MOSFET from Toshiba
500 V, 12 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
1000 to 1220 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
100 W
Package:
DPAK
Applications:
Switching Regulator Applications
more info
R6009JNJ Image
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ROHM Semiconductor - R6009JNJ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-9 to 9 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
450 to 585 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
125 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK7A55D Image
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Toshiba - TK7A55D

MOSFET from Toshiba
550 V, 16 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
550 V
Drain Source Resistance:
1000 to 1250 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Package:
TO-220
Applications:
Switching Regulator Applications
more info
R6006JNJ Image
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ROHM Semiconductor - R6006JNJ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
720 to 936 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
86 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK7Q60W Image
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Toshiba - TK7Q60W

MOSFET from Toshiba
600 V, 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
500 to 600 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Package:
IPAK
Applications:
Switching Voltage Regulators
more info
R6020JNJ Image
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ROHM Semiconductor - R6020JNJ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-20 to 20 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
180 to 234 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
252 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
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