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MOSFETs from Manufacturers in Japan - Page 86

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 86 of 161
QS5U33 Image
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ROHM Semiconductor - QS5U33

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
95 to 225 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-25T
Industry:
Industrial, Commercial
Applications:
Load switch, DC/ DC conversion
more info
TK31Z60X Image
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Toshiba - TK31Z60X

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
73 to 88 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
230 W
Temperature operating range:
150 Degree C
Package:
TO-247-4L
Applications:
Switching Voltage Regulators
more info
RCJ200N20 Image
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ROHM Semiconductor - RCJ200N20

MOSFET from ROHM Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-20 to 20 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
100 to 310 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
106 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Automotive
Applications:
Switching Power Supply, Automotive Motor Drive, Au...
more info
TK31J60W5 Image
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Toshiba - TK31J60W5

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
82 to 99 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
230 W
Temperature operating range:
150 Degree C
Package:
TO-3P
Applications:
Switching Voltage Regulators
more info
R6002END3 Image
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ROHM Semiconductor - R6002END3

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1.7 to 1.7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
2800 to 6000 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
26 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Industrial, Commercial
Applications:
Switching Power Supply
more info
TK4P60D Image
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Toshiba - TK4P60D

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1400 to 1700 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
100 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
US6J11 Image
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ROHM Semiconductor - US6J11

MOSFET from ROHM Semiconductor
-12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-1.3 to 1.3 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
190 to 1060 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-363T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK2K2A60F Image
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Toshiba - TK2K2A60F

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1820 to 2200 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Power Supplies
more info
QS6J11 Image
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ROHM Semiconductor - QS6J11

MOSFET from ROHM Semiconductor
-12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
75 to 400 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
DC/DC Conveters
more info
TK2P60D Image
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Toshiba - TK2P60D

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
3300 to 4300 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
150 Degree C
Package:
New PW-Mold
Applications:
Switching Regulator Applications
more info
RCJ100N25 Image
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ROHM Semiconductor - RCJ100N25

MOSFET from ROHM Semiconductor
250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-10 to 10 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
245 to 730 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
85 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Automotive
Applications:
Switching Power Supply, Automotive Motor Drive, Au...
more info
TK4A55D Image
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Toshiba - TK4A55D

MOSFET from Toshiba
550 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
550 V
Drain Source Resistance:
1500 to 1880 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
R6007KNX Image
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ROHM Semiconductor - R6007KNX

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
570 to 1200 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
46 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK3P80E Image
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Toshiba - TK3P80E

MOSFET from Toshiba
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
3900 to 4900 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
QS5U21 Image
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ROHM Semiconductor - QS5U21

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
160 to 340 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-25T
Industry:
Industrial, Commercial
Applications:
Load switch, DC/ DC conversion
more info
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