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MOSFETs from Manufacturers in Japan - Page 83

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 83 of 161
TK430A60F Image
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Toshiba - TK430A60F

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
360 to 430 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Power Supplies
more info
R6007ENX Image
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ROHM Semiconductor - R6007ENX

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
570 to 1200 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
46 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK5A55D Image
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Toshiba - TK5A55D

MOSFET from Toshiba
550 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
550 V
Drain Source Resistance:
1400 to 1700 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Regulator Applications
more info
RCX200N20 Image
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ROHM Semiconductor - RCX200N20

MOSFET from ROHM Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-20 to 20 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
100 to 310 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
48 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Automotive
Applications:
Switching Power Supply, Automotive Motor Drive, Au...
more info
TK750A60F Image
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Toshiba - TK750A60F

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
620 to 750 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Power Supplies
more info
RCX450N20 Image
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ROHM Semiconductor - RCX450N20

MOSFET from ROHM Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-45 to 45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
42 to 125 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Automotive
Applications:
Switching Power Supply, Automotive Motor Drive, Au...
more info
TK290P65Y Image
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Toshiba - TK290P65Y

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.5 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
230 to 290 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
100 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
QS6J1 Image
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ROHM Semiconductor - QS6J1

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
155 to 430 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK39Z60X Image
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Toshiba - TK39Z60X

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
55 to 65 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
270 W
Temperature operating range:
150 Degree C
Package:
TO-247-4L
Applications:
Switching Voltage Regulators
more info
R6007JNX Image
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ROHM Semiconductor - R6007JNX

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
600 to 780 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
46 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK31V60X Image
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Toshiba - TK31V60X

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
78 to 98 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
240 W
Temperature operating range:
150 Degree C
Package:
DFN8x8
Applications:
Switching Voltage Regulators
more info
RCX700N20 Image
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ROHM Semiconductor - RCX700N20

MOSFET from ROHM Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-70 to 70 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
30.5 to 87 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
83 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Automotive
Applications:
Switching Power Supply, Automotive Motor Drive, Au...
more info
TK5A53D Image
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Toshiba - TK5A53D

MOSFET from Toshiba
525 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
525 V
Drain Source Resistance:
1200 to 1500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Regulator Applications
more info
R6006KND3 Image
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ROHM Semiconductor - R6006KND3

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
720 to 1600 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
70 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK6A65W Image
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Toshiba - TK6A65W

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.8 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
850 to 1000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
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