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MOSFETs from Manufacturers in Japan - Page 82

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 82 of 161
R6055VNZ4 Image
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ROHM Semiconductor - R6055VNZ4

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-55 to 55 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
59 to 80 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
543 W
Temperature operating range:
150 Degree C
Package:
TO-247AD
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK6A65D Image
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Toshiba - TK6A65D

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
950 to 1110 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Regulator Applications
more info
RCJ331N25 Image
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ROHM Semiconductor - RCJ331N25

MOSFET from ROHM Semiconductor
250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-33 to 33 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
77 to 230 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
211 W
Temperature operating range:
150 Degree C
Package:
TO-263S (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK4P60DB Image
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Toshiba - TK4P60DB

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1600 to 2000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
SH8J31 Image
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ROHM Semiconductor - SH8J31

MOSFET from ROHM Semiconductor
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
50 to 85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
Switching, motor drive
more info
TK2P90E Image
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Toshiba - TK2P90E

MOSFET from Toshiba
900 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
4700 to 5900 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
R6004ENX Image
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ROHM Semiconductor - R6004ENX

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
900 to 1360 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK6A60W Image
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Toshiba - TK6A60W

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.2 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
680 to 750 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Regulator Applications
more info
R6006KNX Image
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ROHM Semiconductor - R6006KNX

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
720 to 1600 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK2A65D Image
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Toshiba - TK2A65D

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
2800 to 3260 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
RD3U060CN Image
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ROHM Semiconductor - RD3U060CN

MOSFET from ROHM Semiconductor
250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
410 to 530 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
52 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Industrial, Commercial
Applications:
Switching Power Supply
more info
TK6Q60W Image
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Toshiba - TK6Q60W

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.2 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
680 to 820 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
150 Degree C
Package:
IPAK
Applications:
Switching Voltage Regulators
more info
R6024VNX Image
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ROHM Semiconductor - R6024VNX

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-13 to 13 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
127 to 166 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
70 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK62N60W5 Image
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Toshiba - TK62N60W5

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
61.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
36 to 45 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
400 W
Temperature operating range:
150 Degree C
Package:
TO-247
Applications:
Switching Voltage Regulators
more info
RCX300N20 Image
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ROHM Semiconductor - RCX300N20

MOSFET from ROHM Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-30 to 30 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
60 to 180 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
61 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Automotive
Applications:
Switching Power Supply, Automotive Motor Drive, Au...
more info
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