MOSFETs from Manufacturers in Switzerland - Page 18

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Page 18 of 77
-30 to 30 V, 5.3 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.5 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
7250 to 10000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
H2PAK-2
Applications:
Switching applications
more info
-30 to 30 V, 42 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.5 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
2700 to 3700 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 48 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17.5 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
275 to 330 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 18.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
1050 V
Drain Source Resistance:
900 to 1000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
29 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP wide creepage
Applications:
Switching applications
more info
- 25 to 25 V, 72.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
58 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
45 to 54 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
431 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Applications:
Switching applications
more info
- 25 to 25 V, 414 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
138 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
12 to 15 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
625 W
Temperature operating range:
0 to 150 Degree C
Package:
Max247
Applications:
Switching applications
more info
-30 to 30 V, 19 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
3000 to 3500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
90 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
-30 to 30 V, 43 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
150 to 180 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 43.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
350 to 400 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
-65 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 11 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
600 to 680 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
130 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 11 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
910 to 1100 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
-30 to 30 V, 3.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
2100 to 2600 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
-30 to 30 V, 16.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
800 to 950 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
-30 to 30 V, 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
550 to 630 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 40 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
190 to 260 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info

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