MOSFETs from Manufacturers in Switzerland - Page 19

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Page 19 of 77
-30 to 30 V, 22.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
3000 to 3500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
- 25 to 25 V, 121 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
66 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
37 to 42 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
446 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Applications:
Switching applications
more info
-30 to 30 V, 46.5 to 60.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.8 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
1560 to 2000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
140 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
550 to 630 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
- 25 to 25 V, 125 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
68 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
36 to 40 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
450 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Applications:
Switching applications
more info
-30 to 30 V, 13 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1300 to 1600 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
85 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
470 to 600 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
- 25 to 25 V, 117 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
72 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
32 to 36 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
446 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Applications:
Switching applications
more info
-30 to 30 V, 18 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
5400 to 6000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
90 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
-30 to 30 V, 44.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
620 to 690 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 3.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
4300 to 5000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
-30 to 30 V, 13.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
950 to 1200 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
-30 to 30 V, 190 to 266 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
45 to 50 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
560 W
Temperature operating range:
0 to 150 Degree C
Package:
Max247
Applications:
Switching applications
more info
- 25 to 25 V, 80 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
51 to 59 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
431 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Applications:
Switching applications
more info
-30 to 30 V, 22.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
3600 to 4800 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
90 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info

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