MOSFETs from Manufacturers in Switzerland - Page 17

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Page 17 of 77
-30 to 30 V, 5.3 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
1900 to 2100 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 10.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
2100 to 2500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1500 to 1750 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
38 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerFLAT 5x6 VHV
Applications:
Switching applications
more info
-30 to 30 V, 43 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18.5 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
250 to 299 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
30 V, 5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
3500 to 4500 Milliohm
Gate Source Voltage:
30 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 51 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
680 to 850 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
-30 to 30 V, 16.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
800 to 950 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
42 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerFLAT 5x6 VHV
Applications:
Switching applications
more info
-30 to 30 V, 29.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
280 to 330 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1500 to 1750 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 73 to 102 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.5 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
1600 to 1850 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
HIGH CURRENT, SWITCHING APPLICATION, IDEAL FOR OFF...
more info
-30 to 30 V, 29.3 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
1500 V
Drain Source Resistance:
6000 to 9000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
63 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3PF
Applications:
Switching applications
more info
-30 to 30 V, 19 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
3800 to 4500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 3.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
2100 to 2600 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
38 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerFLAT 5x6 VHV
Applications:
Switching applications
more info
-30 to 30 V, 12 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
950 to 1150 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
-30 to 30 V, 5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
3700 to 4500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
33 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerFLAT 5x6 VHV
Applications:
Switching applications
more info

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