MOSFETs from Manufacturers in Switzerland - Page 25

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Page 25 of 77
- 25 to 25 V, 98 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
37 to 42 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
390 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Automotive
Applications:
Switching applications
more info
- 25 to 25 V, 99 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
62 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
36 to 42 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
390 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO247-4
Applications:
Switching applications
more info
- 25 to 25 V, 125 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
68 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
36 to 40 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
450 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
- 25 to 25 V, 57 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
78 to 88 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Applications:
Switching applications
more info
- 25 to 25 V, 82 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
67 to 78 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
210 W
Temperature operating range:
0 to 150 Degree C
Package:
TO-247 long leads
Applications:
Switching applications
more info
- 25 to 25 V, 54.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
68 to 82 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
347 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Industry:
Automotive
Applications:
Switching applications
more info
- 25 to 25 V, 80 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
55 to 63 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
391 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Industry:
Automotive
Applications:
Switching applications
more info
- 25 to 25 V, 70 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
65 to 79 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Applications:
Switching applications
more info
-30 to 30 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
400 to 445 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
130 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 26 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
290 to 340 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
170 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 43.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
35 to 40 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
150 W
Temperature operating range:
-65 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
55 to 63 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 29.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
280 to 330 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 32 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
300 to 375 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info
-30 to 30 V, 40 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
210 to 250 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Applications:
Switching applications
more info

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