MOSFETs from Manufacturers in United States - Page 36

9,086 MOSFETs from 25 manufacturers meet your specification.
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9,086 MOSFETs from 25 Manufacturers
9,086 Products from 25 Manufacturers
Page 36 of 606
650 V, 120 A, MOSFET

Product Specs

Technology:
SiC
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
15 milli-ohm
Temperature operating range:
175 Degree C
Industry:
Industrial, Commercial
Applications:
Power Supplies, Server/Telecom, EV-Charging System...
more info
-90 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.25 A
Drain Source Breakdown Voltage:
-90 V
Drain Source Resistance:
6000 to 15000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92
Industry:
Commercial, Industrial
Applications:
Motor controls, Converters, Amplifiers, Switches, ...
more info
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40.3 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
65 to 90 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
187.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Automotive
Applications:
xEV Charger, Electric Vehicle Supply Equipment (EV...
more info
1200 V, 33 to 63 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 to 63 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
34 to 63 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
263 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Industrial, Commercial
Applications:
xEV-OBC and DC-DC, EV Fast Charging Infrastructure...
more info
1200 V, 5 to 10 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 to 10 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
350 to 499 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
63 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
N Channel Enhancement Mode SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
53 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
29 milliohm
Gate Source Voltage:
25 V
Power Dissipation:
385 W
Temperature operating range:
-55 to 175 degree C
Package:
TO-247-4L
Industry:
Automotive, Industrial
Applications:
Power factor correction modules, Switch mode power...
more info
30 V N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 to 0.19 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.4 to 4.0 Ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.69 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN1006-3
Industry:
Industrial, Commercial
Applications:
ESD HBM Class 1C
more info
1200 V SiC Full-Bridge MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
23 to 27 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
71 to 130 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
119 W
Temperature operating range:
-40 to 175 Degree C
Industry:
Industrial, Commercial
Applications:
Photovoltaic Inverter, Battery charger, Energy sto...
more info
20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
0.43 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
900 to 2000 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.15 to 0.35 W
Temperature operating range:
-65 to 150 Degree C
Package:
SOT-563
Industry:
Industrial, Commercial
Applications:
Load switch/Level shifting, Battery charging, Boos...
more info
10.6 V, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.003 to 0.012 A
Drain Source Breakdown Voltage:
10.6 V
Drain Source Resistance:
500000 to 104000000 milliohm
Gate Source Voltage:
10.6 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
SOIC
Industry:
Commercial, Industrial
Applications:
Energy harvesting circuits, Very low voltage analo...
more info
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.5 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
290 to 360 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
101 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252(D-PAK)
Industry:
Commercial, Industrial
Applications:
Power factor correction(PFC), Switched mode power ...
more info
250 V, 300 mA, N-Channel Depletion Mode HERMETIC MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
300 mA
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
6 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
LCC-3
Industry:
Industrial, Commercial
more info
200 V, 28 to 39 A, 125 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
28 to 39 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
30 to 35 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 175 Degree C
Package:
PDFN
Industry:
Industrial, Commercial
Applications:
LED Lighting, Boost converters and SMPS control FE...
more info
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
9 to 14.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
DC/DC primary side switch, Telecom/server 48 V, fu...
more info
40 V Single N-Channel MOSFET for Synchronous Rectification Applications

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
278 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.9 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
136 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Commercial, Industrial
Applications:
High Switching Frequency DC-DC Conversion, Synchro...
more info

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