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MOSFETs - Page 147

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 147 of 1280
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UN Semiconductor - UN300DN26T

MOSFET from UN Semiconductor
30 V, 4.4 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
4.4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
20 to 40 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.83 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-26
Industry:
Industrial, Commercial
Applications:
Load Switch for Portable Devices, Voltage Controll...
more info
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Hunan Jingxin Microelectronics - ES3907

MOSFET from Hunan Jingxin Microelectronics
-60 V, -7.3 to -9.4 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7.3 to -9.4 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
19 to 28 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - JSM12N60C

MOSFET from JSMicro Semiconductor
600 V, 7.4 to 12.0 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.4 to 12.0 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.63 to 0.80 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
51 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
High Frequency switching mode power supplies, Acti...
more info
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First Silicon - FTK3984DFN56

MOSFET from First Silicon
30 V, 122 W, N-Channel Enhancement Mode, MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
95 to 150 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.95 to 3.3 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
122 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN56
Industry:
Industrial, Commercial
Applications:
Networking, Load Switch, LED applications
more info
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Cystech Electronics - MTB060P06KN3-0-T1-G

MOSFET from Cystech Electronics
-60 V, -2.5 to -2 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 to -2 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
65 to 135 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.9 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
more info
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PFC Device - PRM4R2N06N5

MOSFET from PFC Device
60 V, 66 to 105 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
66 to 105 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4.2 to 9.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN-5x6
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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uPI Semiconductor - QM3010K

MOSFET from uPI Semiconductor
30 V, 2.8 to 4.0 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.8 to 4.0 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
45 to 75 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.32 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Buck Conv...
more info
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Isahaya Electronics - INK0001AM1

MOSFET from Isahaya Electronics
50 V, 100 mA, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 mA
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
3.5 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-70
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
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Oriental Semiconductor - OSQ120R035K7T2F

MOSFET from Oriental Semiconductor
1200 V, 38 to 48 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 to 48 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
35 to 65 milli-ohm
Gate Source Voltage:
-4 to 18 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO263-7L
Industry:
Industrial, Commercial, Automotive
Applications:
Solar inverters, On-board charger/PFC, EV motor dr...
more info
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Galaxy Century Microelectronics - BSS84DW

MOSFET from Galaxy Century Microelectronics
±12 V, -0.13 A Dual P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.13 A
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
2100 to 10000 milli-ohm
Gate Source Voltage:
±12 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Military, Industrial, Commercial
Applications:
P-channel enhancement mode effect transistor, Swit...
more info
TJ20S04M3L Image
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Toshiba - TJ20S04M3L

MOSFET from Toshiba
-40 V, 37 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
17 to 32 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
41 W
Package:
DPAK
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
RQJ0203WGDQA Image
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Renesas - RQJ0203WGDQA

MOSFET from Renesas
-20 V, 2.6 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
142 to 300 milliohm
Gate Source Voltage:
-12 to 8 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
RH7G04BBLFRA Image
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ROHM Semiconductor - RH7G04BBLFRA

MOSFET from ROHM Semiconductor
40 V, -40 to 40 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.5 to 5.1 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN
Industry:
Automotive, Industrial, Commercial
Applications:
ADAS, Info, Lighting, Body
more info
BSS84I Image
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Infineon Technologies - BSS84I

MOSFET from Infineon Technologies
-60 V, -0.17 to -0.29 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
4344.4 to 7000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.4 to 0.96 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-SOT23-3
Industry:
Industrial, Commercial
more info
SiRA96DP-T1-GE3 Image
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Vishay - SiRA96DP-T1-GE3

MOSFET from Vishay
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
7.3 to 12 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
34.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous buck converter, High power density DC/...
more info
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