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MOSFETs - Page 245

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 245 of 1280
ALD111933PAL Image
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Advanced Linear Devices - ALD111933PAL

MOSFET from Advanced Linear Devices
10.6 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.003 to 0.0069 A
Drain Source Breakdown Voltage:
10.6 V
Drain Source Resistance:
500000 milliohm
Gate Source Voltage:
10.6 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
Plastic Dip
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
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Magnachip Semiconductor - MDF11N60TH

MOSFET from Magnachip Semiconductor
-30 to 30 V, 38.4 nC, N-Channel Enhancement Mode, MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.9 to 11 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.45 to 0.55 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
49 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Commercial, Industrial
Applications:
Power Supply, PFC, High Current, High Speed Switch...
more info
PJS6421 Image
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Panjit Semiconductor - PJS6421

MOSFET from Panjit Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7.4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
21 to 40 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23 6L-1
Industry:
Commercial, Military
more info
RM2P60S2 Image
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Rectron Semiconductor - RM2P60S2

MOSFET from Rectron Semiconductor
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.9 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
170 to 260 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
PWM applications, Load switch, Power management, H...
more info
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Yangjie Electronic Technology - YJL03G10A

MOSFET from Yangjie Electronic Technology
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
110 to 300 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
DC-DC Converters, Power management functions
more info
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Goford Semiconductor - G34N20F

MOSFET from Goford Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
61 to 85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
230 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
Active power factor correction, Switching Mode Pow...
more info
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Hunan Jingxin Microelectronics - ES3347

MOSFET from Hunan Jingxin Microelectronics
-30 V, -30 to -39 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-30 to -39 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8 to 18 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN3x3-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - JSM7N80F

MOSFET from JSMicro Semiconductor
800 V, 4.4 to 7.0 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.4 to 7.0 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1.4 to 1.7 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
48 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
High Frequency Switching Mode Power Supply, Active...
more info
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First Silicon - FTK4828F

MOSFET from First Silicon
60 V, 2.0 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.0 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
56 to 77 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 to 0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-89
Industry:
Industrial, Commercial
more info
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Cystech Electronics - MTB240N25J3-0-T3-G

MOSFET from Cystech Electronics
250 V, 1.6 to 9 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.6 to 9 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
220 to 315 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
52 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
more info
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PFC Device - PRM012N10S8

MOSFET from PFC Device
100 V, 6.7 to 10.7 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.7 to 10.7 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
12 to 15 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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uPI Semiconductor - QN1002RAE

MOSFET from uPI Semiconductor
12 V, 26 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.85 to 6.65 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
3.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
WLCSP
Industry:
Industrial, Commercial
Applications:
Lithium-ion battery charging and discharging switc...
more info
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Isahaya Electronics - INJ0003AU1

MOSFET from Isahaya Electronics
-20 V, -200 mA, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-200 mA
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
2.0 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-75A
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
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Oriental Semiconductor - OSG65R069H4SZF

MOSFET from Oriental Semiconductor
650 V, 33.5 to 53 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33.5 to 53 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
60 to 150 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
390 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-4L
Industry:
Industrial, Commercial
Applications:
PC Power, Telecom Power, Server power, EV Charger,...
more info
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Galaxy Century Microelectronics - GBLN6607-5DL8

MOSFET from Galaxy Century Microelectronics
±20 V, 33 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
33 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
12 to 16 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5X6-8LC
Industry:
Military, Industrial, Commercial
more info
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