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MOSFETs - Page 518

19,198 MOSFETs from 69 manufacturers meet your specification.
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19,198 MOSFETs from 69 Manufacturers
19,198 Products from 69 Manufacturers
Page 518 of 1280
STF7LN80K5 Image
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STMicroelectronics - STF7LN80K5

MOSFET from STMicroelectronics
-30 to 30 V, 12 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
950 to 1150 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
IXFP34N65X3 Image
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Littelfuse - IXFP34N65X3

MOSFET from Littelfuse
650 V, 29 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
100 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
446 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
DMG2301U Image
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Diodes Incorporated - DMG2301U

MOSFET from Diodes Incorporated
20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.7 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
80 to 110 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 ºC
Package:
SOT23
Applications:
Motor Control, Backlighting, DC-DC Converters, Pow...
more info
APT14F100B Image
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Microchip Technology - APT14F100B

MOSFET from Microchip Technology
1000 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
980 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
500 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial
Applications:
ZVS phase shifted and other full bridge, Half brid...
more info
PSMN6R1-25MLD Image
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Nexperia - PSMN6R1-25MLD

MOSFET from Nexperia
-20 to 20 V, 4.9 to 10.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
41 to 60 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
6.46 to 17.51 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
42 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK33
Industry:
Commercial, Industrial
Applications:
On-board DC-DC solutions for server and telecommun...
more info
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Advanced Power Electronics Corp - AP4024EYT

MOSFET from Advanced Power Electronics Corp
30 V, 16.5 to 20.7 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16.5 to 20.7 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.6 to 8.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.12 W
Temperature operating range:
-55 to 150 Degree C
Package:
PMPAK- 3x3
Industry:
Industrial, Commercial
more info
TSM7N90CZ Image
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Taiwan Semiconductor - TSM7N90CZ

MOSFET from Taiwan Semiconductor
900 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
1520 to 1900 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Power Supply, Lighting
more info
PJT7601 Image
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Panjit Semiconductor - PJT7601

MOSFET from Panjit Semiconductor
-20 to 20 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.5 to 0.5 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
280 to 6000 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Commercial, Military
more info
RM5N800HD Image
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Rectron Semiconductor - RM5N800HD

MOSFET from Rectron Semiconductor
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1200 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
98 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263(D2-PAK)
Industry:
Commercial, Industrial
Applications:
Power factor correction(PFC), Switched mode power ...
more info
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Yangjie Electronic Technology - YJS12G06D

MOSFET from Yangjie Electronic Technology
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
6.8 to 12 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
DC-DC Converters, Power management functions, Indu...
more info
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Goford Semiconductor - G30N02T

MOSFET from Goford Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
10.5 to 13 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power switching application, Load switching, LED p...
more info
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Hunan Jingxin Microelectronics - ES6602

MOSFET from Hunan Jingxin Microelectronics
30 V, 4.0 to 5.0 A, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
4.0 to 5.0 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
25 to 43 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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First Silicon - FTK09C6B

MOSFET from First Silicon
100 V, 24 to 38 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 to 38 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
14 to 23 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Networking, Load Switch, LED applications, Quick C...
more info
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Cystech Electronics - MTB200N25FP-0-UB-G

MOSFET from Cystech Electronics
250 V, 2.6 to 8.4 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.6 to 8.4 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
150 to 225 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
35 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Industry:
Industrial, Commercial
more info
TK8A50DA Image
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Toshiba - TK8A50DA

MOSFET from Toshiba
500 V, 16 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.5 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
760 to 1040 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Package:
TO-220
Applications:
Switching Regulator Applications
more info
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