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MOSFETs - Page 775

19,201 MOSFETs from 69 manufacturers meet your specification.
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19,201 MOSFETs from 69 Manufacturers
19,201 Products from 69 Manufacturers
Page 775 of 1281
PJL9830A Image
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Panjit Semiconductor - PJL9830A

MOSFET from Panjit Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
4.8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
37 to 60 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Military
more info
TPH3R70APL Image
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Toshiba - TPH3R70APL

MOSFET from Toshiba
100 V, 67 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.1 to 6.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
SH8MA4 Image
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ROHM Semiconductor - SH8MA4

MOSFET from ROHM Semiconductor
-30 to 30 V, 7.9 to 19.6 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-9 to 9 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
16.5 to 41.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
Switching
more info
IMW120R220M1H Image
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Infineon Technologies - IMW120R220M1H

MOSFET from Infineon Technologies
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
220 to 372 Milliohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-3
Industry:
Industrial, Commercial, Automotive
Applications:
Energy generation o Solar string inverter and sola...
more info
SiHJ690N60E Image
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Vishay - SiHJ690N60E

MOSFET from Vishay
-30 to 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.6 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
600 to 700 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
48 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8L
Applications:
Switch mode power supplies (SMPS), Flyback convert...
more info
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onsemi - NVD5117PLT4G

MOSFET from onsemi
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-61 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
12 to 22 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
118 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK-3
Industry:
Automotive, Industrial, Commercial
Applications:
Automotive High Side Drive, Automotive Engine Cont...
more info
STL36N60M6 Image
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STMicroelectronics - STL36N60M6

MOSFET from STMicroelectronics
- 25 to 25 V, 44.3 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
91 to 110 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
160 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerFLAT 8x8 HV
Applications:
Switching applications, LLC converters, resonant c...
more info
IXFP130N10T2 Image
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Littelfuse - IXFP130N10T2

MOSFET from Littelfuse
-20 to 20 V, 130 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
130 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
10.1 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
360 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Applications:
DC-DC Converters, Battery Chargers, Switched-Mode ...
more info
DMTH4014LPSW Image
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Diodes Incorporated - DMTH4014LPSW

MOSFET from Diodes Incorporated
40 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
43.5 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
10.8 to 25 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
4 to 46.9 W
Temperature operating range:
-55 to 175 ºC
Package:
PowerDI5060-8
Applications:
High Frequency Switching, Synchronized Rectificati...
more info
VN2450 Image
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Microchip Technology - VN2450

MOSFET from Microchip Technology
500 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 to 0.25 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
1300 to 20000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.74 to 1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-89, TO-92
Industry:
Commercial, Medical
Applications:
Motor controls, Converters, Amplifiers, Switches, ...
more info
PMPB27EPA Image
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Nexperia - PMPB27EPA

MOSFET from Nexperia
30 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.1 to -3.9 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
24 to 45 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.7 to 12.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT1220
Industry:
Automotive, Commercial, Industrial
Applications:
Relay driver, High-speed line driver, Low-side loa...
more info
PJQ4442P-AU Image
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Panjit Semiconductor - PJQ4442P-AU

MOSFET from Panjit Semiconductor
40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
6.3 to 10.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
53.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333-8L
Industry:
Industrial, Military
more info
TPH5200FNH Image
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Toshiba - TPH5200FNH

MOSFET from Toshiba
250 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
44 to 52 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
78 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
SH8M31 Image
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ROHM Semiconductor - SH8M31

MOSFET from ROHM Semiconductor
-60 to 60 V, 7 to 40 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
46 to 85 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
Switching
more info
IMW120R060M1H Image
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Infineon Technologies - IMW120R060M1H

MOSFET from Infineon Technologies
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
60 to 113 Milliohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-3
Industry:
Industrial, Commercial, Automotive
Applications:
Energy generation o Solar string inverter and sola...
more info
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