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MOSFETs - Page 9

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
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VBsemi Electronics - VBP112MC26-4L

MOSFET from VBsemi Electronics
1200 V, 26 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
58 milli-ohm
Gate Source Voltage:
-4 to 22 V
Package:
TO247-4L
Industry:
Industrial, Commercial
more info
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uPI Semiconductor - QM2429S

MOSFET from uPI Semiconductor
-20 V, -6.8 to -8.5 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.8 to -8.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
12 to 22 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
more info
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Calogic - 3N172

MOSFET from Calogic
-40 V, 50 mA, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
50 mA
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
250 ohm
Gate Source Voltage:
-3.0 to -6.5 V
Power Dissipation:
375 mW
Temperature operating range:
-55 to 150 Degree C
Package:
TO-72
Industry:
Industrial, Commercial
more info
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Isahaya Electronics - INKE111AC1

MOSFET from Isahaya Electronics
40 to 60 V, 0.5 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
40 to 60 V
Drain Source Resistance:
0.6 to 0.8 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
Switching
more info
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Mospec Semiconductor - 114N60A

MOSFET from Mospec Semiconductor
60 V, 72 to 114 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
72 to 114 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.8 to 5.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
183 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial, Automotive
Applications:
PowerTools, Quick Charger, LED applications, Motor...
more info
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Oriental Semiconductor - OSG65R380FT3F

MOSFET from Oriental Semiconductor
650 V, 7 to 11 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 11 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
330 to 870 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
34 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
PC power, LED lighting, Telecom power, Server powe...
more info
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Galaxy Century Microelectronics - 2N7172V

MOSFET from Galaxy Century Microelectronics
±20 V, -2.5 to 0.4 A Dual N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2.5 to 0.4 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
1000 to 5000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-563
Industry:
Military, Industrial, Commercial
more info
N3PT028MP120K Image
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NoMIS Power - N3PT028MP120K

MOSFET from NoMIS Power
1200 V Silicon Carbide MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
51 to 72 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
25 to 52 milli-ohm
Gate Source Voltage:
-5 to 20 V
Power Dissipation:
268 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Industrial, Commercial
Applications:
Motor drives, Solar PV inverters, EV onboard charg...
more info
iS20M8R0S1B Image
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iDEAL Semiconductor Devices - iS20M8R0S1B

MOSFET from iDEAL Semiconductor Devices
200 V, 81 to 115 A, 250 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
81 to 115 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
7.4 to 8.2 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 175 Degree C
Package:
D2PAK-3L
Industry:
Industrial, Commercial
Applications:
Motor control, Boost converters and SMPS control F...
more info
GSFU9006 Image
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Good Ark Semiconductor - GSFU9006

MOSFET from Good Ark Semiconductor
900 V, 3.8 to 6 A, 32 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.8 to 6 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
670 to 1980 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
32 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
EV charger, Solar, UPS, Server power
more info
RIR120CMF031B4N Image
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RIR Power Electronics - RIR120CMF031B4N

MOSFET from RIR Power Electronics
1200 V, 52 to 74 A, 319 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
52 to 74 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
31 to 49.6 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
319 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Industrial, Commercial
Applications:
Solar inverter, EV charging station / OBC, Online ...
more info
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Minebea Power Semiconductor Device - MSM800GS33ALT

MOSFET from Minebea Power Semiconductor Device
3300 V, 800 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
800 A
Drain Source Breakdown Voltage:
3300 V
Gate Source Voltage:
-15 to 20 V
Temperature operating range:
-40 to 175 Degree C
Industry:
Industrial, Commercial
more info
TK063Z60Z1 Image
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Toshiba - TK063Z60Z1

MOSFET from Toshiba
600 V, 37 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
37 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
53 to 63 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
242 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-4L(X)
Industry:
Industrial, Commercial
Applications:
Switching Power Supplies
more info
RBA300N10EHPF Image
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Renesas - RBA300N10EHPF

MOSFET from Renesas
AEC-Q101 Qualified N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
±340 A
Drain Source Resistance:
1.3 to 1.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
468 W
Temperature operating range:
-55 to 175 Degree C
Package:
TOLG
Industry:
Automotive, Industrial, Commercial
Applications:
Small Traction (2-wheel, 3-wheel vehicle), 48V loa...
more info
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ROHM Semiconductor - RQ5G040AT

MOSFET from ROHM Semiconductor
-40 V, -4.0 to 4.0 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.0 to 4.0 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
37 to 57 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.7 to 1.0 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives
more info
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