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MOSFETs from Manufacturers in Germany - Page 47

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 47 of 89
IMW65R057M1H Image
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Infineon Technologies - IMW65R057M1H

MOSFET from Infineon Technologies
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
57 to 80 Milliohm
Gate Source Voltage:
-5 to 23 V
Power Dissipation:
133 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-3
Industry:
Industrial, Commercial, Automotive
Applications:
SMPS, UPS(uninterruptable power supplies), Solar P...
more info
AIMW120R060M1H Image
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Infineon Technologies - AIMW120R060M1H

MOSFET from Infineon Technologies
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
60 to 113 Milliohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-3
Industry:
Industrial, Commercial
Applications:
On-board Charger/PFC, Booster/DC-DC Converter
more info
IMBG65R072M1H Image
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Infineon Technologies - IMBG65R072M1H

MOSFET from Infineon Technologies
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
72 to 101 Milliohm
Gate Source Voltage:
-2 to 20 V
Power Dissipation:
140 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Industrial, Commercial, Automotive
Applications:
Telecom and Server SMPS, UPS(uninterruptable power...
more info
IMBF170R1K0M1 Image
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Infineon Technologies - IMBF170R1K0M1

MOSFET from Infineon Technologies
1700 V N-Channel Enhancement Mode SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.2 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
1000 milliohms
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
68 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO263-7
Industry:
Industrial, Commercial, Automotive
Applications:
Infrastructure – Charge o Charger, Industrial powe...
more info
IMBG65R039M1H Image
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Infineon Technologies - IMBG65R039M1H

MOSFET from Infineon Technologies
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
54 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
39 to 55 Milliohm
Gate Source Voltage:
-2 to 20 V
Power Dissipation:
211 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Industrial, Commercial, Automotive
Applications:
Telecom and Server SMPS, UPS(uninterruptable power...
more info
IMZ120R220M1H Image
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Infineon Technologies - IMZ120R220M1H

MOSFET from Infineon Technologies
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
220 to 416 Milliohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4
Industry:
Industrial, Commercial, Automotive
Applications:
Energy generation o Solar string inverter and sola...
more info
IMZA65R048M1H Image
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Infineon Technologies - IMZA65R048M1H

MOSFET from Infineon Technologies
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
39 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
48 to 64 Milliohm
Gate Source Voltage:
-5 to 23 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO247-4
Industry:
Industrial, Commercial, Automotive
Applications:
SMPS, UPS(uninterruptable power supplies), Solar P...
more info
IMZA65R072M1H Image
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Infineon Technologies - IMZA65R072M1H

MOSFET from Infineon Technologies
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
28 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
72 to 94 Milliohm
Gate Source Voltage:
-5 to 23 V
Power Dissipation:
96 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO247-4
Industry:
Industrial, Commercial, Automotive
Applications:
SMPS, UPS(uninterruptable power supplies), Solar P...
more info
IMW120R140M1H Image
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Infineon Technologies - IMW120R140M1H

MOSFET from Infineon Technologies
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
140 to 265 Milliohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
94 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-3
Industry:
Industrial, Commercial, Automotive
Applications:
Energy generation o Solar string inverter and sola...
more info
AIMW120R080M1 Image
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Infineon Technologies - AIMW120R080M1

MOSFET from Infineon Technologies
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 to 135 Milliohm
Gate Source Voltage:
-7 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-3
Industry:
Industrial, Commercial
Applications:
On-board Charger/PFC, Booster/DC-DC Converter
more info
IMBF170R650M1 Image
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Infineon Technologies - IMBF170R650M1

MOSFET from Infineon Technologies
1700 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.4 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
650 to 1324 Milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
88 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO263-7
Industry:
Industrial, Commercial, Automotive
Applications:
Energy generation o Solar string inverter and sola...
more info
IMBG120R140M1H Image
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Infineon Technologies - IMBG120R140M1H

MOSFET from Infineon Technologies
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
140 to 265 Milliohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
107 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO263-7
Industry:
Industrial, Commercial, Automotive
Applications:
Drives, Infrastructure – Charger, Energy generatio...
more info
IMW120R030M1H Image
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Infineon Technologies - IMW120R030M1H

MOSFET from Infineon Technologies
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
30 to 56 Milliohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
227 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-3
Industry:
Industrial, Commercial, Automotive
Applications:
Energy generation o Solar string inverter and sola...
more info
IMZA120R020M1H Image
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Infineon Technologies - IMZA120R020M1H

MOSFET from Infineon Technologies
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
98 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
19 to 36 Milliohm
Gate Source Voltage:
-10 to 23 V
Power Dissipation:
375 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4
Industry:
Industrial, Commercial, Automotive
Applications:
General purpose drives (GPD), EV-Charging, Online ...
more info
IMW65R083M1H Image
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Infineon Technologies - IMW65R083M1H

MOSFET from Infineon Technologies
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
83 to 116 Milliohm
Gate Source Voltage:
-5 to 23 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-3
Industry:
Industrial, Commercial, Automotive
Applications:
SMPS, UPS(uninterruptable power supplies), Solar P...
more info
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