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MOSFETs from Manufacturers in Germany - Page 48

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Page 48 of 89
IMBG65R083M1H Image
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Infineon Technologies - IMBG65R083M1H

MOSFET from Infineon Technologies
650 V N Channel Enhancement Mode SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
28 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
83 to 116 milliohm
Gate Source Voltage:
-2 to 20 V
Power Dissipation:
126 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Industrial, Commercial, Automotive
Applications:
Telecom and Server SMPS, UPS(uninterruptable power...
more info
IMW120R040M1H Image
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Infineon Technologies - IMW120R040M1H

MOSFET from Infineon Technologies
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
39 to 77 Milliohm
Gate Source Voltage:
-10 to 23 V
Power Dissipation:
227 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-3
Industry:
Industrial, Commercial, Automotive
Applications:
General purpose drives (GPD), EV-Charging, Online ...
more info
IMW120R090M1H Image
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Infineon Technologies - IMW120R090M1H

MOSFET from Infineon Technologies
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
90 to 160 Milliohm
Gate Source Voltage:
-7 to 23 V
Power Dissipation:
115 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-3
Industry:
Industrial, Commercial, Automotive
Applications:
Energy generation o Solar string inverter and sola...
more info
IMBG65R030M1H Image
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Infineon Technologies - IMBG65R030M1H

MOSFET from Infineon Technologies
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
63 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
30 to 42 Milliohm
Gate Source Voltage:
-2 to 20 V
Power Dissipation:
234 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Industrial, Commercial, Automotive
Applications:
Telecom and Server SMPS, UPS(uninterruptable power...
more info
ISK036N03LM5 Image
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Infineon Technologies - ISK036N03LM5

MOSFET from Infineon Technologies
30 V N-Channel Enhancement MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
16.5 to 44 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.4 to 4.6 milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.1 to 11 W
Temperature operating range:
-55 to 150 degree C
Industry:
Industrial
Applications:
Charger, Consumer appliances, Consumer Electronics...
more info
ISK024NE2LM5 Image
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Infineon Technologies - ISK024NE2LM5

MOSFET from Infineon Technologies
25 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
20 to 55 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
1.9 to 3.4 milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.1 to 11 W
Temperature operating range:
-55 to 150 degree C
Industry:
Industrial
Applications:
Robots and Drones, Wireless Charging, Industrial S...
more info
IAUS300N08S5N012T Image
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Infineon Technologies - IAUS300N08S5N012T

MOSFET from Infineon Technologies
80 V N-Channel Enhancement MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
300 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.4 mO
Gate Source Voltage:
20 V
Power Dissipation:
375 W
Package:
TOLT
Applications:
Automotive
more info
IPTG014N10NM5 Image
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Infineon Technologies - IPTG014N10NM5

MOSFET from Infineon Technologies
100 V N-Channel Enhancement MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Continous Drain Current:
37 to 366 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
1.3 to 2.0 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.8 to 375 W
Temperature operating range:
-55 to 175 ºC
Package:
PG-HSOG-8-1
Industry:
Industrial
Applications:
Industrial
more info
IPD65R190C7 Image
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Infineon Technologies - IPD65R190C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 to 13 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.168 to 0.404 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
72 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages and PWM stages (TTF, LLC) for high powe...
more info
IPD65R225C7 Image
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Infineon Technologies - IPD65R225C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 11 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.199 to 0.478 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
63 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages and PWM stages (TTF, LLC) for high powe...
more info
IPD60R360P7 Image
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Infineon Technologies - IPD60R360P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 to 9 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.300 to 0.702 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
41 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPD60R210PFD7S Image
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Infineon Technologies - IPD60R210PFD7S

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 16 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.171 to 0.386 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
64 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252-3
Applications:
Recommended for ZV Stopologies used in high densit...
more info
IPB65R110CFD Image
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Infineon Technologies - IPB65R110CFD

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19.7 to 31.2 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.099 to 0.257 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
277.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
more info
IPD60R180C7 Image
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Infineon Technologies - IPD60R180C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 to 13 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.155 to 0.346 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
68 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages and PWM stages (TTF, LLC) for high powe...
more info
IPD60R600P6 Image
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Infineon Technologies - IPD60R600P6

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.6 to 7.3 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.540 to 1.404 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
63 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
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