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MOSFETs from Manufacturers in Germany - Page 55

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 55 of 89
IPB60R280CFD7 Image
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Infineon Technologies - IPB60R280CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 to 9 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.237 to 0.541 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
51 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPDD60R102G7 Image
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Infineon Technologies - IPDD60R102G7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 to 23 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.088 to 0.220 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
139 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
PFC stages and PWM stages (TTF, LLC) for high powe...
more info
IPB60R099P7 Image
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Infineon Technologies - IPB60R099P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 to 31 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.077 to 0.180 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
117 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPD65R400CE Image
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Infineon Technologies - IPD65R400CE

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.5 to 15.1 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.36 to 0.94 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
118 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPD50R500CE Image
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Infineon Technologies - IPD50R500CE

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.8 to 7.6 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
0.45 to 1.18 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
57 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPD50R280CE Image
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Infineon Technologies - IPD50R280CE

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.4 to 18.1 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
0.25 to 0.66 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
119 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPG20N06S2L-65 Image
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Infineon Technologies - IPG20N06S2L-65

MOSFET from Infineon Technologies
55 V Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
67 mO
Gate Source Voltage:
20 V
Power Dissipation:
43 W
Package:
Dual SSO8
Applications:
Direct fuel injection, ABS valves, solenoid contro...
more info
IAUC120N04S6N008 Image
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Infineon Technologies - IAUC120N04S6N008

MOSFET from Infineon Technologies
40 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.80 mO
Gate Source Voltage:
20 V
Power Dissipation:
150 W
Package:
Single SSO8
Applications:
Automotive
more info
IPD90P04P4-05 Image
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Infineon Technologies - IPD90P04P4-05

MOSFET from Infineon Technologies
-40 V P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Continous Drain Current:
-90 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
3.5 mO
Gate Source Voltage:
20 V
Power Dissipation:
125 W
Package:
DPAK (TO-252)
Applications:
Half-bridge motors, 3-phase-motors, and automotive
more info
IPP80N06S2L-09 Image
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Infineon Technologies - IPP80N06S2L-09

MOSFET from Infineon Technologies
55-60 V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
73 to 80 A
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
6.6 to 11.3 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
190 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO220-3-1
Applications:
Automotive
more info
IPD50N06S2-14 Image
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Infineon Technologies - IPD50N06S2-14

MOSFET from Infineon Technologies
55-60 V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
49 to 50 A
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
10.8 to 14.4 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
136 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO252-3-11
Applications:
Automotive
more info
AUIRF7103Q Image
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Infineon Technologies - AUIRF7103Q

MOSFET from Infineon Technologies
55-60 V N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 to 3 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
130 to 200 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
2.4 W
Temperature operating range:
-55 to 175 Degree C
Package:
SO-8
Applications:
Automotive
more info
AUIRF7749L2TR Image
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Infineon Technologies - AUIRF7749L2TR

MOSFET from Infineon Technologies
55-60 V N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36 to 375 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1.1 to 1.5 Mohms
Gate Source Voltage:
60 V
Power Dissipation:
341 W
Temperature operating range:
-55 to 175 Degree C
Package:
DirectFET
Applications:
Automotive
more info
AUIRF2805 Image
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Infineon Technologies - AUIRF2805

MOSFET from Infineon Technologies
55-60 V N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 to 175 A
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
3.9 to 4.7 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
330 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Applications:
Automotive
more info
AUIRF7341Q Image
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Infineon Technologies - AUIRF7341Q

MOSFET from Infineon Technologies
55-60 V N-Channel Automotive MOSFET

Product Specs

Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.2 to 5.1 A
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
0.043 to 0.065 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
1.7 to 2.4 W
Temperature operating range:
-55 to 175 Degree C
Package:
SO-8
Applications:
Automotive
more info
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