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MOSFETs from Manufacturers in Germany - Page 52

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 52 of 89
IPB65R090CFD7 Image
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Infineon Technologies - IPB65R090CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 25 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.068 to 0.150 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
127 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPDD60R045CFD7 Image
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Infineon Technologies - IPDD60R045CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
39 to 61 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.038 to 0.087 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
379 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPB60R160P6 Image
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Infineon Technologies - IPB60R160P6

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 to 23.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.144 to 0.374 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
176 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
PFCstages, hardswitchingPWMstagesandresonantswitch...
more info
IPB60R070CFD7 Image
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Infineon Technologies - IPB60R070CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 to 31 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.057 to 0.129 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
156 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPD95R750P7 Image
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Infineon Technologies - IPD95R750P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.5 to 9 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
0.64 to 1.429 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
73 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPD60R800CE Image
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Infineon Technologies - IPD60R800CE

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.3 to 8.4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.68 to 1.76 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
74 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPB60R045P7 Image
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Infineon Technologies - IPB60R045P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 to 61 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.038 to 0.088 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
201 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPB65R150CFD Image
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Infineon Technologies - IPB65R150CFD

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14.2 to 22.4 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.135 to 0.351 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
195.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
more info
IPB65R225C7 Image
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Infineon Technologies - IPB65R225C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 11 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.199 to 0.478 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
63 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPD60R380P6 Image
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Infineon Technologies - IPD60R380P6

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.7 to 10.6 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.342 to 0.889 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPD60R600PFD7S Image
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Infineon Technologies - IPD60R600PFD7S

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 to 6 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.517 to 1.219 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
31 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252-3
Applications:
Recommended for hard and soft switching fly back t...
more info
IPDD60R125G7 Image
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Infineon Technologies - IPDD60R125G7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 to 20 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.108 to 0.269 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
120 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
PFC stages and PWM stages (TTF, LLC) for high powe...
more info
IPB60R090CFD7 Image
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Infineon Technologies - IPB60R090CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 25 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.075 to 0.170 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
124 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPDD60R075CFD7 Image
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Infineon Technologies - IPDD60R075CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 to 40 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.06 to 0.136 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
266 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPD50R800CE Image
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Infineon Technologies - IPD50R800CE

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.8 to 7.6 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
0.72 to 1.89 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
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