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MOSFETs from Manufacturers in Germany - Page 51

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 51 of 89
IPD80R450P7 Image
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Infineon Technologies - IPD80R450P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.1 to 11 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
0.38 to 0.99 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
73 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
Recommended for hard and soft switching fly back t...
more info
IPD60R400CE Image
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Infineon Technologies - IPD60R400CE

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.3 to 14.7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.34 to 0.89 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
112 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPDD60R080G7 Image
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Infineon Technologies - IPDD60R080G7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 29 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.069 to 0.172 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
174 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
PFC stages and PWM stages (TTF, LLC) for high powe...
more info
IPD60R360CFD7 Image
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Infineon Technologies - IPD60R360CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 to 7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.295 to 0.674 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
43 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPB60R060P7 Image
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Infineon Technologies - IPB60R060P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 to 48 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.049 to 0.115 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
164 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPD80R360P7 Image
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Infineon Technologies - IPD80R360P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8.6 to 13 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
0.31 to 0.80 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
84 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
more info
IPB65R095C7 Image
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Infineon Technologies - IPB65R095C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 to 24 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.084 to 0.202 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
128 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPB60R360CFD7 Image
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Infineon Technologies - IPB60R360CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 to 7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.295 to 0.674 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
43 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IRFR825TRPbF Image
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Infineon Technologies - IRFR825TRPbF

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.9 to 6 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
1.05 to 1.3 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
119 W
Temperature operating range:
-55 to 150 Degree C
Package:
D-Pak
Applications:
Zero voltage switching SMPS, Uninterruptible power...
more info
IPB65R190CFD Image
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Infineon Technologies - IPB65R190CFD

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 to 17.5 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.171 to 0.445 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
151 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
more info
IPDD60R150G7 Image
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Infineon Technologies - IPDD60R150G7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 16 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.129 to 0.323 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
95 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
PFC stages and PWM stages (TTF, LLC) for high powe...
more info
IPD50R650CE Image
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Infineon Technologies - IPD50R650CE

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.7 to 9 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
0.59 to 1.54 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
69 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPB65R041CFD7 Image
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Infineon Technologies - IPB65R041CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
32 to 50 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.035 to 0.076 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
227 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPD70R360P7S Image
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Infineon Technologies - IPD70R360P7S

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.5 to 12.5 A
Drain Source Breakdown Voltage:
700 V
Drain Source Resistance:
0.30 to 0.67 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
59.5 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252-3
more info
IPDD60R125CFD7 Image
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Infineon Technologies - IPDD60R125CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 to 27 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.101 to 0.229 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
176 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
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