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MOSFETs from Manufacturers in Germany - Page 54

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 54 of 89
IPB65R155CFD7 Image
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Infineon Technologies - IPB65R155CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 15 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.132 to 0.293 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
77 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPB60R145CFD7 Image
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Infineon Technologies - IPB60R145CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 16 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.127 to 0.289 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
SPD07N60C3 Image
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Infineon Technologies - SPD07N60C3

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.6 to 7.3 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.54 to 1.46 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252
more info
IPD60R280P7 Image
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Infineon Technologies - IPD60R280P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 to 12 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.214 to 0.501 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
53 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPD70R600P7S Image
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Infineon Technologies - IPD70R600P7S

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 to 8.5 A
Drain Source Breakdown Voltage:
700 V
Drain Source Resistance:
0.49 to 1.03 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
43.1 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252-3
Applications:
Recommended for Fly back topologies for example us...
more info
SPB17N80C3 Image
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Infineon Technologies - SPB17N80C3

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 to 17 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
0.25 to 0.67 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
227 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
more info
IPD60R145CFD7 Image
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Infineon Technologies - IPD60R145CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 16 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.127 to 0.290 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPB60R280P6 Image
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Infineon Technologies - IPB60R280P6

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8.8 to 13.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.252 to 0.655 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPD95R450P7 Image
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Infineon Technologies - IPD95R450P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8.6 to 14 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
0.38 to 0.848 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
Recommended for hard and soft switching fly back t...
more info
IPD60R280CFD7 Image
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Infineon Technologies - IPD60R280CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 to 9 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.237 to 0.541 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
51 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
AUIRF7343Q Image
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Infineon Technologies - AUIRF7343Q

MOSFET from Infineon Technologies
30-55 V Dual N and P-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.4 to 4.7 V
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
0.043 to 0.170 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
1.3 to 2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Automotive
more info
IPB60R360P7 Image
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Infineon Technologies - IPB60R360P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 to 9 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.300 to 0.702 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
41 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPD60R180P7 Image
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Infineon Technologies - IPD60R180P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 to 18 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.145 to 0.341 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
72 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages and PWM stages (TTF, LLC) for high powe...
more info
IPDD60R105CFD7 Image
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Infineon Technologies - IPDD60R105CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 to 31 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.088 to 0.199 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
198 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPB65R125CFD7 Image
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Infineon Technologies - IPB65R125CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 to 19 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.1 to 0.222 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
98 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
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