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MOSFETs from Manufacturers in Germany - Page 53

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 53 of 89
IPD60R280PFD7S Image
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Infineon Technologies - IPD60R280PFD7S

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 12 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.233 to 0.549 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
51 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252-3
Applications:
Recommended for ZV Stopologies used in high densit...
more info
IPB65R190C7 Image
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Infineon Technologies - IPB65R190C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 to 13 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.168 to 0.404 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
72 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPB60R080P7 Image
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Infineon Technologies - IPB60R080P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 to 37 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.069 to 0.161 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
129 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPB60R040CFD7 Image
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Infineon Technologies - IPB60R040CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
32 to 50 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.031 to 0.070 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
227 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPB60R105CFD7 Image
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Infineon Technologies - IPB60R105CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 to 21 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.089 to 0.202 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
106 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPDD60R090CFD7 Image
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Infineon Technologies - IPDD60R090CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 to 33 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.074 to 0.168 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
227 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPD60R360PFD7S Image
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Infineon Technologies - IPD60R360PFD7S

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 to 10 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.303 to 0.715 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
43 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252-3
Applications:
Recommended for ZV Stopologies used in high densit...
more info
IPD60R600P7 Image
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Infineon Technologies - IPD60R600P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 to 6 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.490 to 0.512 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPDD60R170CFD7 Image
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Infineon Technologies - IPDD60R170CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 to 19 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.139 to 0.317 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
137 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPB60R180P7 Image
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Infineon Technologies - IPB60R180P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 to 18 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.145 to 0.340 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
72 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPB60R125CFD7 Image
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Infineon Technologies - IPB60R125CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 to 18 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.104 to 0.237 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
92 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPB60R055CFD7 Image
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Infineon Technologies - IPB60R055CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 to 38 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.046 to 0.104 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
178 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
AUIRF7309Q Image
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Infineon Technologies - AUIRF7309Q

MOSFET from Infineon Technologies
30-55 V Dual N and P-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3 to 4 V
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.050 to 0.16 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Automotive
more info
SPB20N60C3 Image
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Infineon Technologies - SPB20N60C3

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13.1 to 20.7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.16 to 0.43 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
more info
IPDD60R050G7 Image
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Infineon Technologies - IPDD60R050G7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 to 47 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.043 to 0.108 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
PFC stages and PWM stages (TTF, LLC) for high powe...
more info
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