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MOSFETs from Manufacturers in Japan - Page 110

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 110 of 161
UM6K31N Image
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ROHM Semiconductor - UM6K31N

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.25 to 0.25 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1700 to 12000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-363
Industry:
Industrial
Applications:
Switching
more info
TPN4R712MD Image
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Toshiba - TPN4R712MD

MOSFET from Toshiba
-20 V, 65 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-36 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
3.8 to 8.1 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
42 W
Package:
TSON Advance
Industry:
Commercial, Industrial
Applications:
Lithium-Ion Secondary Batteries, Power Management ...
more info
SH8KA1 Image
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ROHM Semiconductor - SH8KA1

MOSFET from ROHM Semiconductor
30 V, 3 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
57 to 125 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.7 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
Switching, Motor Drive
more info
TPH3R704PL Image
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Toshiba - TPH3R704PL

MOSFET from Toshiba
40 V, 27 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
92 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3 to 6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
81 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
QS8K21 Image
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ROHM Semiconductor - QS8K21

MOSFET from ROHM Semiconductor
45 V, 10 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
38 to 75 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial
Applications:
Switching
more info
TPWR8004PL Image
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Toshiba - TPWR8004PL

MOSFET from Toshiba
40 V, 103 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
340 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.65 to 1.35 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Package:
DSOP Advance
Industry:
Commercial, Industrial, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
SH8MA3 Image
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ROHM Semiconductor - SH8MA3

MOSFET from ROHM Semiconductor
-30 to 30 V, 3.7 to 10 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
23 to 73 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.8 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
Switching
more info
TK040N65Z Image
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Toshiba - TK040N65Z

MOSFET from Toshiba
650 V, 105 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
57 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
33 to 40 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
360 W
Package:
TO-247
Industry:
Industrial, Military, Automotive
Applications:
Switching Power Supplies
more info
HP8M31 Image
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ROHM Semiconductor - HP8M31

MOSFET from ROHM Semiconductor
-60 to 60 V, 12.3 to 38 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-8.5 to 8.5 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
46 to 80 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
7 W
Temperature operating range:
150 Degree C
Package:
HSOP8D
Industry:
Industrial
Applications:
motor
more info
TPN1200APL Image
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Toshiba - TPN1200APL

MOSFET from Toshiba
100 V, 24 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
66 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
9.8 to 20 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Package:
TSON Advance
Industry:
Commercial, Industrial, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
SH8M41 Image
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ROHM Semiconductor - SH8M41

MOSFET from ROHM Semiconductor
-80 to 80 V, 6.6 to 11.5 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.4 to 3.4 A
Drain Source Breakdown Voltage:
-80 to 80 V
Drain Source Resistance:
90 to 310 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
Switching
more info
TPW4R008NH Image
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Toshiba - TPW4R008NH

MOSFET from Toshiba
80 V, 59 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
116 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
3.3 to 4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
142 W
Package:
DSOP Advance
Industry:
Commercial, Industrial, Automotive
Applications:
DC-DC Converters, Switching Voltage Regulators, Mo...
more info
QH8MA3 Image
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ROHM Semiconductor - QH8MA3

MOSFET from ROHM Semiconductor
-30 to 30 V, 7.2 to 10 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
22 to 72 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial
Applications:
Switching
more info
TPH3R70APL1 Image
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Toshiba - TPH3R70APL1

MOSFET from Toshiba
100 V, 67 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
170 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.1 to 6.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
210 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
HP8M51 Image
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ROHM Semiconductor - HP8M51

MOSFET from ROHM Semiconductor
-100 to 100 V, 15 to 26.2 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
120 to 320 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
7 W
Temperature operating range:
150 Degree C
Package:
HSOP8D
Industry:
Industrial
Applications:
Switching
more info
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