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MOSFETs from Manufacturers in Japan - Page 109

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 109 of 161
TPH3R203NL Image
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Toshiba - TPH3R203NL

MOSFET from Toshiba
30 V, 21 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
47 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.7 to 4.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
44 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
HP8MA2 Image
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ROHM Semiconductor - HP8MA2

MOSFET from ROHM Semiconductor
-30 to 30 V, 22 to 25 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-18 to 18 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
7.5 to 29 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
7 W
Temperature operating range:
150 Degree C
Package:
HSOP8D
Industry:
Industrial
Applications:
Switching
more info
TPHR8504PL1 Image
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Toshiba - TPHR8504PL1

MOSFET from Toshiba
40 V, 103 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
370 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.7 to 1.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
310 W
Package:
SOP Advance
Industry:
Commercial, Industrial, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
SH8M31 Image
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ROHM Semiconductor - SH8M31

MOSFET from ROHM Semiconductor
-60 to 60 V, 7 to 40 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
46 to 85 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
Switching
more info
TPH5R906NH Image
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Toshiba - TPH5R906NH

MOSFET from Toshiba
60 V, 38 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
71 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4.8 to 14 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
57 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
DC-DC Converters, Switching Voltage Regulators, Mo...
more info
UT6KB5 Image
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ROHM Semiconductor - UT6KB5

MOSFET from ROHM Semiconductor
40 V, 3.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
37 to 80 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
DFN2020-8D
Industry:
Industrial
Applications:
DC/DC converters
more info
2SK4115 Image
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Toshiba - 2SK4115

MOSFET from Toshiba
900 V, 45 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
1600 to 2000 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
150 W
Package:
TO-3P
Industry:
Industrial, Military, Automotive
Applications:
Switching Regulator Applications
more info
SH8KA7 Image
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ROHM Semiconductor - SH8KA7

MOSFET from ROHM Semiconductor
30 V, 81 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-15 to 15 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
7.1 to 10.9 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
4.6 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
Switching, Motor Drive
more info
2SK3565 Image
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Toshiba - 2SK3565

MOSFET from Toshiba
900 V, 28 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
2000 to 2500 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Package:
TO-220
Industry:
Industrial, Military, Automotive
Applications:
Switching Regulator Applications
more info
QH8MA4 Image
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ROHM Semiconductor - QH8MA4

MOSFET from ROHM Semiconductor
-30 to 30 V, 7.9 to 19.6 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-9 to 9 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
12.3 to 40.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.6 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial
Applications:
Switching
more info
TPHR9203PL1 Image
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Toshiba - TPHR9203PL1

MOSFET from Toshiba
30 V, 81 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
320 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.61 to 1.29 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Package:
SOP Advance
Industry:
Commercial, Industrial, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
US6K1 Image
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ROHM Semiconductor - US6K1

MOSFET from ROHM Semiconductor
30 V, 2.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
170 to 340 Milliohm
Gate Source Voltage:
12 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-363T
Industry:
Industrial
Applications:
Switching
more info
2SK4014 Image
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Toshiba - 2SK4014

MOSFET from Toshiba
900 V, 45 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
1600 to 2000 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Package:
TO-220
Industry:
Industrial, Military, Automotive
Applications:
DC-DC Converter, Relay Drive and Motor Drive Appli...
more info
US6K2 Image
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ROHM Semiconductor - US6K2

MOSFET from ROHM Semiconductor
30 V, 2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-1.4 to 1.4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
170 to 380 Milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-363T
Industry:
Industrial
Applications:
Switching
more info
TPH9R00CQH Image
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Toshiba - TPH9R00CQH

MOSFET from Toshiba
N-Channel Enhancement Mode Silicon MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
64 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
7.9 milliohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
210 W
Package:
SOP Advance
Industry:
Commercial, Industrial, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
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