1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs from Manufacturers in Japan - Page 113

2,414 MOSFETs from 10 manufacturers meet your specification.
Filters (1)
Selected Filters:
2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 113 of 161
TPN2R805PL Image
Download Datasheet  Request Quote  Product Details

Toshiba - TPN2R805PL

MOSFET from Toshiba
45 V, 39 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
139 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
2.2 to 5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Package:
TSON Advance
Industry:
Commercial, Industrial, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RRH050P03 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RRH050P03

MOSFET from ROHM Semiconductor
-30 V, 9.2 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
36 to 63 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
DC/DC converters
more info
TPN2R203NC Image
Download Datasheet  Request Quote  Product Details

Toshiba - TPN2R203NC

MOSFET from Toshiba
30 V, 34 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.8 to 3.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
42 W
Package:
TSON Advance
Industry:
Commercial, Industrial
Applications:
Power Management Switches
more info
RZF030P01 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RZF030P01

MOSFET from ROHM Semiconductor
-12 V, 18 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
28 to 144 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-323T
Industry:
Industrial
Applications:
Switching
more info
2SK3566 Image
Download Datasheet  Request Quote  Product Details

Toshiba - 2SK3566

MOSFET from Toshiba
900 V, 12 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
5600 to 6400 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Package:
TO-220
Industry:
Industrial, Military, Automotive
Applications:
Switching Regulator Applications
more info
QH8K22 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - QH8K22

MOSFET from ROHM Semiconductor
40 V, 2.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-6.5 to 6.5 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
35 to 49 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial
Applications:
Switching
more info
TPN11003NL Image
Download Datasheet  Request Quote  Product Details

Toshiba - TPN11003NL

MOSFET from Toshiba
30 V, 7.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
31 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
9.4 to 16 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
19 W
Package:
SOP Advance
Industry:
Commercial, Industrial
Applications:
Switching Voltage Regulators, DC-DC Converters
more info
SH8K12 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - SH8K12

MOSFET from ROHM Semiconductor
30 V, 4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
30 to 63 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
Switching
more info
TPHR9003NC Image
Download Datasheet  Request Quote  Product Details

Toshiba - TPHR9003NC

MOSFET from Toshiba
30 V, 75 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
220 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.77 to 1.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
78 W
Package:
SOP Advance
Industry:
Commercial, Industrial
Applications:
ORing Circuits, Power Management Switches
more info
HS8K11 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - HS8K11

MOSFET from ROHM Semiconductor
30 V, 20.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-11 to 11 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
10.2 to 29.1 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
HSML3030L10
Industry:
Industrial
Applications:
Switching
more info
2SK3700 Image
Download Datasheet  Request Quote  Product Details

Toshiba - 2SK3700

MOSFET from Toshiba
900 V, 28 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
2000 to 2500 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
150 W
Package:
TO-3P
Industry:
Industrial, Military, Automotive
Applications:
Switching Regulator Applications
more info
RV5C040AP Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RV5C040AP

MOSFET from ROHM Semiconductor
-20 V, 8.5 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
60 to 260 Milliohm
Gate Source Voltage:
-8 to 0 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
DFN1616-6
Industry:
Industrial
Applications:
Switching, Load switch
more info
TPH5900CNH Image
Download Datasheet  Request Quote  Product Details

Toshiba - TPH5900CNH

MOSFET from Toshiba
150 V, 7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
50 to 59 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
42 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RZF013P01 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RZF013P01

MOSFET from ROHM Semiconductor
-12 V, 2.4 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.3 to 1.3 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
190 to 1060 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-323T
Industry:
Industrial
Applications:
Switching
more info
TPN8R408QM Image
Download Datasheet  Request Quote  Product Details

Toshiba - TPN8R408QM

MOSFET from Toshiba
80 V, 28 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
77 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
6.5 to 12.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Package:
TSON Advance
Industry:
Commercial, Industrial, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.