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MOSFETs from Manufacturers in Japan - Page 114

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 114 of 161
RS3E130AT Image
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ROHM Semiconductor - RS3E130AT

MOSFET from ROHM Semiconductor
-30 V, 83 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-13 to 13 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
6.5 to 11.2 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
Switching
more info
TPHR6503PL1 Image
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Toshiba - TPHR6503PL1

MOSFET from Toshiba
30 V, 110 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
420 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.41 to 0.89 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
210 W
Package:
SOP Advance
Industry:
Commercial, Industrial, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RAQ045P01 Image
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ROHM Semiconductor - RAQ045P01

MOSFET from ROHM Semiconductor
-12 V, 40 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
22 to 100 Milliohm
Gate Source Voltage:
-8 to 0 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial
Applications:
Switching
more info
TPH5R60APL Image
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Toshiba - TPH5R60APL

MOSFET from Toshiba
100 V, 52 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
110 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4.7 to 9.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
132 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
EM6K6 Image
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ROHM Semiconductor - EM6K6

MOSFET from ROHM Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.3 to 0.3 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
700 to 1400 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-563
Industry:
Industrial
Applications:
Switching
more info
TPH8R008NH Image
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Toshiba - TPH8R008NH

MOSFET from Toshiba
80 V, 35 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
63 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
6.6 to 8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
61 W
Package:
SOP Advance
Industry:
Commercial, Industrial, Automotive
Applications:
DC-DC Converters, Switching Voltage Regulators, Mo...
more info
RRH140P03 Image
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ROHM Semiconductor - RRH140P03

MOSFET from ROHM Semiconductor
-30 V, 80 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-14 to 14 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
5 to 10.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
DC/DC converters
more info
TPN3R704PL Image
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Toshiba - TPN3R704PL

MOSFET from Toshiba
40 V, 27 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
92 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3 to 6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
86 W
Package:
TSON Advance
Industry:
Commercial, Industrial, Automotive
Applications:
DC-DC Converters, Switching Voltage Regulators, Mo...
more info
QH8KA2 Image
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ROHM Semiconductor - QH8KA2

MOSFET from ROHM Semiconductor
30 V, 8.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
25 to 56 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial
Applications:
Switching
more info
TPN7R504PL Image
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Toshiba - TPN7R504PL

MOSFET from Toshiba
40 V, 24 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
68 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
5.6 to 10 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
61 W
Package:
TSON Advance
Industry:
Commercial, Industrial, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RU1C001ZP Image
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ROHM Semiconductor - RU1C001ZP

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.1 to 0.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
2500 to 40000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.2 W
Temperature operating range:
150 Degree C
Package:
SOT-323FL
Industry:
Industrial
Applications:
Switching
more info
TPN14006NH Image
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Toshiba - TPN14006NH

MOSFET from Toshiba
60 V, 15 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
11 to 41 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Package:
TSON Advance
Industry:
Commercial, Industrial, Automotive
Applications:
DC-DC Converters, Switching Voltage Regulators, Mo...
more info
RF6C055BC Image
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ROHM Semiconductor - RF6C055BC

MOSFET from ROHM Semiconductor
-20 V, 15.2 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.5 to 5.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
19.5 to 63.6 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-363T
Industry:
Industrial
Applications:
Switching, Load switch
more info
TPH4R606NH Image
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Toshiba - TPH4R606NH

MOSFET from Toshiba
60 V, 49 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
85 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.8 to 11 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
63 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
DC-DC Converters, Switching Voltage Regulators, Mo...
more info
QS6K21 Image
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ROHM Semiconductor - QS6K21

MOSFET from ROHM Semiconductor
45 V, 2.1 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-1 to 1 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
300 to 585 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial
Applications:
Switching
more info
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