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MOSFETs from Manufacturers in Japan - Page 143

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 143 of 161
SSM6J212FE Image
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Toshiba - SSM6J212FE

MOSFET from Toshiba
0.7 W, -20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
35.3 to 94 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.7 W
Package:
SOT-563
Applications:
Power Management Switch Applications
more info
RQ3E120GN Image
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ROHM Semiconductor - RQ3E120GN

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-27 to 27 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6.7 to 13.8 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Temperature operating range:
150 Degree C
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6K211FE Image
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Toshiba - SSM6K211FE

MOSFET from Toshiba
0.5 W, 20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
36 to 118 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Package:
SOT-563
Applications:
High-Speed Switching, Power Management Switches
more info
RS1E170GN Image
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ROHM Semiconductor - RS1E170GN

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5.1 to 10.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
23 W
Temperature operating range:
150 Degree C
Package:
HSOP8S
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6K24FE Image
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Toshiba - SSM6K24FE

MOSFET from Toshiba
0.5 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
120 to 180 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.5 W
Package:
SOT-563
Applications:
High Speed Switching Applications
more info
RQ3E080GN Image
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ROHM Semiconductor - RQ3E080GN

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-18 to 18 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
12.9 to 31.2 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
14 W
Temperature operating range:
150 Degree C
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6N16FU Image
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Toshiba - SSM6N16FU

MOSFET from Toshiba
0.2 W, 20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1500 to 15000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.2 W
Package:
SOT-363
Applications:
High Speed Switching Applications, Analog Switchin...
more info
RQ1C075UN Image
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ROHM Semiconductor - RQ1C075UN

MOSFET from ROHM Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7.5 to 7.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
11 to 40 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6J216FE Image
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Toshiba - SSM6J216FE

MOSFET from Toshiba
0.7 W, -12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.8 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
26 to 88.1 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.7 W
Package:
SOT-563
Applications:
Power Management Switches
more info
RS1E240BN Image
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ROHM Semiconductor - RS1E240BN

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.3 to 4.6 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Temperature operating range:
150 Degree C
Package:
HSOP8S
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6K781G Image
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Toshiba - SSM6K781G

MOSFET from Toshiba
2.9 W, 12 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
14.4 to 124 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2.9 W
Package:
WCSP6C
Applications:
Power Management Switches
more info
RQ1C065UN Image
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ROHM Semiconductor - RQ1C065UN

MOSFET from ROHM Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 to 6.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
16 to 58 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM3K72CTC Image
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Toshiba - SSM3K72CTC

MOSFET from Toshiba
0.5 W, 60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.15 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2800 to 8100 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Package:
CST3C
Applications:
High-Speed Switching
more info
RQ3E110AJ Image
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ROHM Semiconductor - RQ3E110AJ

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-24 to 24 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
8.8 to 16.5 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
15 W
Temperature operating range:
150 Degree C
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6K217FE Image
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Toshiba - SSM6K217FE

MOSFET from Toshiba
0.5 W, 40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.8 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
155 to 400 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.5 W
Package:
SOT-563
Applications:
Power Management Switches, DC-DC Converters
more info
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