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MOSFETs from Manufacturers in Japan - Page 142

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 142 of 161
RQ6E035AT Image
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ROHM Semiconductor - RQ6E035AT

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
38 to 70 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM5P16FE Image
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Toshiba - SSM5P16FE

MOSFET from Toshiba
0.15 W, -20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
6000 to 45000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-553
Applications:
High Speed Switching Applications, Analog Switch A...
more info
RQ6A045ZP Image
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ROHM Semiconductor - RQ6A045ZP

MOSFET from ROHM Semiconductor
-12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
25 to 100 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM5N15FU Image
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Toshiba - SSM5N15FU

MOSFET from Toshiba
0.2 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2200 to 7000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Package:
SOT-353
Applications:
High Speed Switching Applications, Analog Switch A...
more info
RQ6A050ZP Image
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ROHM Semiconductor - RQ6A050ZP

MOSFET from ROHM Semiconductor
-12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
19 to 88 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6J215FE Image
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Toshiba - SSM6J215FE

MOSFET from Toshiba
0.7 W, -20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
50 to 154 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.7 W
Package:
SOT-563
Applications:
Power Management Switches
more info
RS1E130GN Image
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ROHM Semiconductor - RS1E130GN

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-35 to 35 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
8.9 to 17.7 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
22 W
Temperature operating range:
150 Degree C
Package:
HSOP8S
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6J501NU Image
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Toshiba - SSM6J501NU

MOSFET from Toshiba
2 W, -20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
12 to 43 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2 W
Package:
SOT-1220
Applications:
Power Management Switch Applications
more info
RQ3E120BN Image
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ROHM Semiconductor - RQ3E120BN

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-21 to 21 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6.6 to 11.9 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
16 W
Temperature operating range:
150 Degree C
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6J512NU Image
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Toshiba - SSM6J512NU

MOSFET from Toshiba
2.5 W, -12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
12.4 to 40.1 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
2.5 W
Package:
SOT-1220
Applications:
Power Management Switches
more info
RJ1L12BGN Image
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ROHM Semiconductor - RJ1L12BGN

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-120 to 120 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.1 to 4.1 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
192 W
Temperature operating range:
150 Degree C
Package:
TO263AB
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM3K72CFS Image
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Toshiba - SSM3K72CFS

MOSFET from Toshiba
0.5 W, 60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.17 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2800 to 8100 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Package:
SOT-416
Applications:
High-Speed Switching
more info
RJ1P12BBD Image
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ROHM Semiconductor - RJ1P12BBD

MOSFET from ROHM Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-120 to 120 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4.4 to 7.8 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
178 W
Temperature operating range:
150 Degree C
Package:
TO263AB
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6K513NU Image
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Toshiba - SSM6K513NU

MOSFET from Toshiba
2.5 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6.5 to 12 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Package:
UDFN6B
Applications:
Power Management Switches
more info
RQ3G150GN Image
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ROHM Semiconductor - RQ3G150GN

MOSFET from ROHM Semiconductor
40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-39 to 39 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
5.1 to 8.9 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
150 Degree C
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching, DC/DC converter
more info
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