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MOSFETs from Manufacturers in Japan - Page 147

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 147 of 161
SSM6K516NU Image
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Toshiba - SSM6K516NU

MOSFET from Toshiba
2.5 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
33 to 64 Milliohm
Gate Source Voltage:
-12 to 20 V
Power Dissipation:
2.5 W
Package:
UDFN6B
Applications:
Power Management Switches, High-Speed Switching
more info
RQ5E065AJ Image
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ROHM Semiconductor - RQ5E065AJ

MOSFET from ROHM Semiconductor
30 V, 12.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 to 6.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
13.7 to 23.7 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6K204FE Image
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Toshiba - SSM6K204FE

MOSFET from Toshiba
0.5 W, 20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
90 to 307 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Package:
SOT-563
Applications:
High-Speed Switching, Power Management Switches
more info
RE1L002SN Image
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ROHM Semiconductor - RE1L002SN

MOSFET from ROHM Semiconductor
60 V, , N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.25 to 0.25 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1700 to 12000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Package:
SOT-416FL
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6J414TU Image
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Toshiba - SSM6J414TU

MOSFET from Toshiba
1 W, -20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
18 to 54 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1 W
Package:
SOT-363
Applications:
Power Management Switches
more info
SCT3105KW7 Image
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ROHM Semiconductor - SCT3105KW7

MOSFET from ROHM Semiconductor
1200 V, 51 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
105 to 179 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
125 W
Package:
TO-263-7L
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
SSM6K208FE Image
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Toshiba - SSM6K208FE

MOSFET from Toshiba
0.5 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.9 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
103 to 296 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.5 W
Package:
SOT-563
Applications:
High-Speed Switching, Power Management Switches
more info
RQ3E100BN Image
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ROHM Semiconductor - RQ3E100BN

MOSFET from ROHM Semiconductor
30 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-21 to 21 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
7.7 to 15.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6J511NU Image
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Toshiba - SSM6J511NU

MOSFET from Toshiba
2.5 W, -12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-14 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
6.5 to 19.2 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
2.5 W
Package:
SOT-1220
Applications:
Power Management Switches
more info
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ROHM Semiconductor - S4103

MOSFET from ROHM Semiconductor
1200 V, 178 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
95 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
22 to 33 Milliohm
Gate Source Voltage:
-4 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
SSM6J825R Image
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Toshiba - SSM6J825R

MOSFET from Toshiba
3 W, -30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
35 to 86 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
3 W
Package:
TSOP6F
Applications:
Power Management Switches
more info
RD3P100SN Image
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ROHM Semiconductor - RD3P100SN

MOSFET from ROHM Semiconductor
100 V, 18 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-10 to 10 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
95 to 147 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Package:
TO252 (DPAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6J507NU Image
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Toshiba - SSM6J507NU

MOSFET from Toshiba
2.5 W, -30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
14 to 32 Milliohm
Gate Source Voltage:
-25 to 20 V
Power Dissipation:
2.5 W
Package:
SOT-1220
Applications:
Power Management Switches
more info
SCT3022ALHR Image
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ROHM Semiconductor - SCT3022ALHR

MOSFET from ROHM Semiconductor
650 V, 133 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
93 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
22 to 32 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
339 W
Package:
TO-247N
Industry:
Industrial, Automotive
Applications:
Automobile, Switch mode power supplies
more info
SSM6J50TU Image
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Toshiba - SSM6J50TU

MOSFET from Toshiba
0.5 W, -20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
49 to 205 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Package:
SOT-363
Applications:
High Current Switching Applications
more info
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