1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs from Manufacturers in Japan - Page 140

2,414 MOSFETs from 10 manufacturers meet your specification.
Filters (1)
Selected Filters:
2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 140 of 161
RS3L045GN Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RS3L045GN

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
43 to 92 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6P54TU Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM6P54TU

MOSFET from Toshiba
-20 V, 7.7 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-1.2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
162 to 555 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.5 W
Package:
SOT-363
Applications:
High-Speed Switching Applications, Power Managemen...
more info
RQ5A030AP Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RQ5A030AP

MOSFET from ROHM Semiconductor
-12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
44 to 180 Milliohm
Gate Source Voltage:
-8 to 0 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-416FL
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6N35AFU Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM6N35AFU

MOSFET from Toshiba
20 V, 0.34 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.25 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
750 to 9000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.285 W
Package:
SOT-363
Applications:
High-Speed Switching, Analog Switches
more info
RQ6E060AT Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RQ6E060AT

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
20.3 to 34.6 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching, Load switch
more info
SSM6N35AFE Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM6N35AFE

MOSFET from Toshiba
20 V, 0.34 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.25 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
750 to 9000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-563
Applications:
High-Speed Switching, Analog Switches
more info
RQ6P015SP Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RQ6P015SP

MOSFET from ROHM Semiconductor
-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
350 to 540 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK32A12N1 Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK32A12N1

MOSFET from Toshiba
120 V, 34 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
11 to 13.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Voltage Regulators
more info
RQ6L020SP Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RQ6L020SP

MOSFET from ROHM Semiconductor
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
150 to 266 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK35A08N1 Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK35A08N1

MOSFET from Toshiba
80 V, 25 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
10 to 12.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Voltage Regulators
more info
RS1E350GN Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RS1E350GN

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.48 to 2.4 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
39 W
Temperature operating range:
150 Degree C
Package:
HSOP8S
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK3R1P04PL Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK3R1P04PL

MOSFET from Toshiba
40 V, 60 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
58 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.5 to 4.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
87 W
Package:
DPAK
Industry:
Aerospace, Industrial, Medical, Military
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RQ5C030TP Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RQ5C030TP

MOSFET from ROHM Semiconductor
P-Channel Enhancement Mode MOSFET for Load Switches

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
55 to 125 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK35E08N1 Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK35E08N1

MOSFET from Toshiba
80 V, 25 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
10 to 12.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
72 W
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Voltage Regulators
more info
RV2C002UN Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RV2C002UN

MOSFET from ROHM Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.18 to 0.18 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1.4 to 3.4 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.1 W
Temperature operating range:
150 Degree C
Package:
DFN10063
Industry:
Industrial, Commercial
Applications:
Switching
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.