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MOSFETs from Manufacturers in Japan - Page 145

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 145 of 161
SSM6J771G Image
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Toshiba - SSM6J771G

MOSFET from Toshiba
5 W, -20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
23 to 47.5 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
5 W
Package:
WCSP6C
Applications:
BATFETs, Power Management Switches
more info
RS1E280GN Image
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ROHM Semiconductor - RS1E280GN

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2 to 3.8 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
31 W
Temperature operating range:
150 Degree C
Package:
HSOP8S
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6J412TU Image
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Toshiba - SSM6J412TU

MOSFET from Toshiba
1 W, -20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
36.9 to 99.6 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1 W
Package:
SOT-363
Applications:
Power Management Switches
more info
RQ3L050GN Image
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ROHM Semiconductor - RQ3L050GN

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-13 to 13 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
43 to 86 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
14.8 W
Temperature operating range:
150 Degree C
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM5N15FE Image
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Toshiba - SSM5N15FE

MOSFET from Toshiba
0.15 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2200 to 7000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Package:
SOT-553
Applications:
High Speed Switching Applications, Analog Switch A...
more info
RS1E200GN Image
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ROHM Semiconductor - RS1E200GN

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-57 to 57 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.6 to 7.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
150 Degree C
Package:
HSOP8S
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6N15AFU Image
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Toshiba - SSM6N15AFU

MOSFET from Toshiba
0.3 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2300 to 6000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.3 W
Package:
SOT-363
Applications:
Load Switching Applications
more info
RQ3E080BN Image
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ROHM Semiconductor - RQ3E080BN

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-15 to 15 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
11 to 22 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
14 W
Temperature operating range:
150 Degree C
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6K405TU Image
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Toshiba - SSM6K405TU

MOSFET from Toshiba
0.5 W, 20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
90 to 307 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Package:
SOT-363
Applications:
High-Speed Switching Applications, Power Managemen...
more info
RJ1L12CGN Image
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ROHM Semiconductor - RJ1L12CGN

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-120 to 120 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.5 to 4.8 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
166 W
Temperature operating range:
150 Degree C
Package:
TO263AB
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6K514NU Image
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Toshiba - SSM6K514NU

MOSFET from Toshiba
2.5 W, 40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
8.9 to 17.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Package:
UDFN6B
Applications:
Power Management Switches
more info
RS1E200BN Image
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ROHM Semiconductor - RS1E200BN

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-68 to 68 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.8 to 5.9 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
150 Degree C
Package:
HSOP8S
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM3K72KCT Image
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Toshiba - SSM3K72KCT

MOSFET from Toshiba
0.5 W, 60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.4 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1050 to 1750 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Package:
CST3C
Applications:
High-Speed Switching
more info
RQ3G100GN Image
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ROHM Semiconductor - RQ3G100GN

MOSFET from ROHM Semiconductor
40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-27 to 27 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
11 to 18.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Temperature operating range:
150 Degree C
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6J502NU Image
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Toshiba - SSM6J502NU

MOSFET from Toshiba
2 W, -20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
18.2 to 60.5 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2 W
Package:
SOT-1220
Applications:
Power Management Switches
more info
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